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K9F1208Q0B-P Datasheet(PDF) 2 Page - Samsung semiconductor |
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K9F1208Q0B-P Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 45 page FLASH MEMORY 2 K9F1208D0B K9F1208U0B K9F1208Q0B Advance GENERAL DESCRIPTION FEATURES • Voltage Supply - 1.8V device(K9F1208Q0B) : 1.70~1.95V - 2.65V device(K9F1208D0B) : 2.4~2.9V - 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V • Organization - Memory Cell Array : (64M + 2048K)bit x 8 bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (16K + 512)Byte • Page Read Operation - Page Size : (512 + 16)Byte - Random Access : 15 µs(Max.) - Serial Page Access : 50ns(Min.) 64M x 8 Bit NAND Flash Memory • Fast Write Cycle Time - Program time : 200 µs(Typ.) - Block Erase Time : 2ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years • Command Register Operation • Intelligent Copy-Back • Unique ID for Copyright Protection • Package - K9F1208X0B-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F1208X0B-GCB0/GIB0 63- Ball FBGA (8.5 x 13 , 1.0 mm width) - K9F1208U0B-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm) - K9F1208X0B-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package - K9F1208X0B-JCB0/JIB0 63- Ball FBGA - Pb-free Package - K9F1208U0B-FCB0/FIB0 48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package * K9F1208U0B-V,F(WSOPI ) is the same device as K9F1208U0B-Y,P(TSOP1) except package type. Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200 µs on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B ′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. PRODUCT LIST Part Number Vcc Range PKG Type K9F1208Q0B-D,H 1.70 ~ 1.95V FBGA K9F1208D0B-Y,P 2.4 ~ 2.9V TSOP1 K9F1208D0B-D,H FBGA K9F1208U0B-Y,P 2.7 ~ 3.6V TSOP1 K9F1208U0B-D,H FBGA K9F1208U0B-V,F WSOP1 |
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