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SN65LVDS108DBTR Datasheet(PDF) 3 Page - Texas Instruments |
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SN65LVDS108DBTR Datasheet(HTML) 3 Page - Texas Instruments |
3 / 21 page www.ti.com EQUIVALENT INPUT AND OUTPUT SCHEMATIC DIAGRAMS 300 k Ω 300 k Ω VCC 7 V 7 V A Input B Input VCC 5 Ω 7 V Y or Z Output 10 k Ω 7 V 300 k Ω 50 Ω VCC Enable Inputs 300 k Ω (ENM Only) (ENx Only) ABSOLUTE MAXIMUM RATINGS SN65LVDS108 SLLS399E – NOVEMBER 1999 – REVISED FEBRUARY 2005 FUNCTION TABLE(1) INPUTS OUTPUTS VID = VA – VB ENM ENx xY xZ X L X Z Z X X L Z Z VID≥ 100 mV H H H L –100 mV < VID < 100 mV H H ? ? VID≤-100 mV H H L H (1) H = high level, L = low level, Z = high impedance, X = don't care, ? = indeterminate over operating free-air temperature range (unless otherwise noted)(1) UNIT VCC Supply voltage range(2) –0.5 V to 4 V Enable inputs –0.5 V to 6 V Input voltage range A, B, Y or Z –0.5 V to 4 V Electrostatic discharge, A, B, Y, Z, and GND(3) Class 3, A:12 kV, B: 500 V Continuous power dissipation See Dissipation Rating Table Storage temperature range –65 °C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltage values, except differential I/O bus voltages, are with respect to network ground terminal. (3) Tested in accordance with MIL-STD-883C Method 3015.7. DISSIPATION RATING TABLE TA ≤ 25°C DERATING FACTOR(1) TA = 85°C PACKAGE POWER RATING ABOVE TA = 25°C POWER RATING DBT 1277 mW 10.2 mW/ °C 644 mW (1) This is the inverse of the junction-to-ambient thermal resistance when board-mounted (low-k) with no air flow. 3 |
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