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FDD6606 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FDD6606 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 6 page  FDD6606 Rev B (W) D R P DS(ON) Electrical Characteristics (continued) T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 3.2 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.2 A (Note 2) 0.7 1.2 V trr Diode Reverse Recovery Time IF = 17 A, diF/dt = 100 A/µs 32 nS Qrr Diode Reverse Recovery Charge 20 nC Notes: 1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθCA is determined by the user's board design. a) R θJA = 40°C/W when mounted on a 1in 2 pad of 2 oz copper b) R θJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A |
Similar Part No. - FDD6606 |
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Similar Description - FDD6606 |
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