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K6X4008C1F-GQ55 Datasheet(PDF) 2 Page - Samsung semiconductor |
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K6X4008C1F-GQ55 Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 9 page K6X4008C1F Family CMOS SRAM Revision 1.0 September 2003 2 512Kx8 bit Low Power full CMOS Static RAM GENERAL DESCRIPTION The K6X4008C1F families are fabricated by SAMSUNG ′s advanced full CMOS process technology. The families sup- ports various operating temperature range and various package types for user flexibility of system design. The fam- ilies also support low data retention voltage for battery back- up operation with low data retention current. FEATURES • Process Technology: Full CMOS • Organization: 512Kx8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2V(Min) • Three state output and TTL compatible • Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP2-400F/R PIN DESCRIPTION Pin Name Function WE Write Enable Input CS Chip Select Input OE Output Enable Input A0~A18 Address Inputs I/O1~I/O8 Data Inputs/Outputs Vcc Power Vss Ground PRODUCT FAMILY 1. The parameter is measured with 50pF test load. Product Family Operating Temperature Vcc Range Speed Power Dissipation PKG Type Standby (ISB1, Max) Operating (ICC2, Max) K6X4008C1F-B Commercial (0~70 °C) 4.5~5.5V 551)/70ns 20 µA 30mA 32-DIP-600, 32-SOP-525, 32-TSOP2-400F/R K6X4008C1F-F Industrial (-40~85 °C) K6X4008C1F-Q Automotive (-40~125 °C) 30 µA 32-SOP-525, 32-TSOP2-400F FUNCTIONAL BLOCK DIAGRAM 32-DIP 32-SOP (Forward) 32-TSOP2 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS VCC A15 WE A13 A8 A9 A11 OE A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32-TSOP2 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS VCC A15 WE A13 A8 A9 A11 OE A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Reverse) A18 A17 A17 A18 SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. Precharge circuit. Memory array I/O Circuit Column select Clk gen. Row select I/O1 Data cont Data cont I/O8 CS WE OE Control logic Row Addresses Column Addresses |
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