If MilitaryAerospace specified devices are required

please contact the National Semiconductor Sales

OfficeDistributors for availability and specifications

b

b

b

Storage Temperature Range

b

Power Dissipation (PD)

500 mW

Lead Temperature (Soldering 10 sec)

260 C

Operation Conditions

Min

Max

Unit

45

55

V

V

DC Input or Output Voltage

00

V

b

40

a

85

C

Electr-Static Discharge Rating TBD

1

kV

Transistor Count

15200

Typical Values

Board

Socket

Board

77 CW

Socket

85 CW

DC Electrical Characteristics

Symbol

Parameter

Conditions

Min

Max

Units

High Level Input Voltage

Any Inputs Except OSC IN

20

V

(Note 4)

OSC IN with External Clock

V

Low Level Input Voltage

All Inputs Except OSC IN

08

V

OSC IN with External Clock

01

V

High Level Output Voltage

V

(Excluding OSC OUT)

35

V

Low Level Output Voltage

01

V

(Excluding OSC OUT)

025

V

Input Current (Except OSC IN)

g

10

m

A

Output TRI-STATE Current

g

50

m

A

Output High Leakage Current

g

50

m

A

T1 MFO INTR Pins

Outputs Open Drain

Quiescent Supply Current

260

m

A

(Note 7)

10

mA

120

mA

49152 MHz

8

mA

20

mA

Quiescent Supply Current

(Single Supply Mode)

(Note 7)

80

m

A

75

mA

4194304 MHz

Standby Mode Battery

Supply Current

(Note 8)

10

m

A

400

m

A

4194304 MHz

Battery Supply Leakage

other pins at GND

15

m

A

b

5

m

A

Note 1

Absolute Maximum Ratings are those values beyond which damage to the device may occur

Note 2

Unless otherwise specified all voltages are referenced to ground

Note 3

Note 4

Note 5

Note 6

Note 7

configured as buffered oscillator out and MFO INTR are configured as open drain

Note 8

pin is not configured as buffered oscillator out

2