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SI4501DY Datasheet(PDF) 1 Page - Vishay Siliconix

Part # SI4501DY
Description  Complementary MOSFET Half-Bridge (N- and P-Channel)
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4501DY Datasheet(HTML) 1 Page - Vishay Siliconix

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Si4501DY
Vishay Siliconix
New Product
Document Number: 70934
S-61812—Rev. B, 19-Jul-99
www.vishay.com
2-1
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
N Channel
30
0.018 @ VGS = 10 V
"9
N-Channel
30
0.027 @ VGS = 4.5 V
"7.4
P Channel
8
0.042 @ VGS = - 4.5 V
"6.2
P-Channel
-8
0.060 @ VGS = - 2.5 V
"5.2
S1
D
G1
D
S2
D
G2
D
SO-8
5
6
7
8
Top View
2
3
4
1
S2
G2
G1
S1
D
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
30
-8
V
Gate-Source Voltage
VGS
"20
"8
V
Continuous Drain Current (TJ = 150_C)a, b
TA = 25_C
ID
"9
"6.2
Continuous Drain Current (TJ = 150_C)a, b
TA = 70_C
ID
"7.4
"5.0
A
Pulsed Drain Current
IDM
"30
"20
A
Continuous Source Current (Diode Conduction)a, b
IS
1.7
- 1.7
Maximum Power Dissipationa, b
TA = 25_C
PD
2.5
W
Maximum Power Dissipationa, b
TA = 70_C
PD
1.6
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
_C
THERMAL RESISTANCE RATINGS
N-Channel
P- Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Mi
J
ti
t A bi
ta
t
v 10 sec
R
38
50
40
50
Maximum Junction-to-Ambienta
Steady-State
RthJA
73
95
73
95
_C/W
Maximum Junction-to-Foot
Steady-State
RthJC
17
22
20
26
C/W
Notes
a.
Surface Mounted on FR4 Board.
b.
t
v 10 sec


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