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LM96551 Datasheet(PDF) 5 Page - Texas Instruments |
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LM96551 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 17 page LM96551 www.ti.com SNAS511B – OCTOBER 2011 – REVISED MAY 2013 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) Maximum Junction Temperature (TJMAX) +150°C Storage Temperature Range −40°C to +125°C Supply Voltage (VDD) –0.3V to +12V Supply Voltage (VDN) +0.3V and −12V Supply Voltage (VPP) –0.3V and +55V Supply Voltage (VNN) +0.3V and −55V Supply Voltage (VSUB) −65V IO Supply Voltage (VLL) −0.3V to +5.5V Voltage at Logic Inputs −0.3V to VLL +0.3V (1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device is specified to be functional, but do not specify specific performance limits. For specifications and test conditions, see the Electrical Characteristics. (2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. Operating Ratings Operation Junction Temperature 0°C to + 70°C VPP, −VNN; High-voltage supply +3.3V to +50V VDD, −VDN; Level-shift supply +9V to 11V VLL, Logic Supply +2.4V to +5.3V VSUB, Substrate bias supply must be most negative supply Package Thermal Resistance ( θJA ) 19.7 °C/W ESD Tolerance Human Body Model 2KV Machine Model 150V Charge Device Model 750V Copyright © 2011–2013, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: LM96551 |
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