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ELM3D0804A-S Datasheet(PDF) 2 Page - ELM Technology Corporation |
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ELM3D0804A-S Datasheet(HTML) 2 Page - ELM Technology Corporation |
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2 / 4 page  2 ELM3D0804A-S 4 - ■Electrical characteristics Parameter Symbol Condition Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V 40 V Zero gate voltage drain current Idss Vds=32V, Vgs=0V 1 μA Vds=30V, Vgs=0V, Ta=55°C 10 Gate-body leakage current Igss Vds=0V, Vgs=±20V ±100 nA Gate threshold voltage Vgs(th) Vds=Vgs, Id=250μA 1.5 2.0 3.0 V Static drain-source on-resistance Rds(on) Vgs=10V, Id=20A 6.5 8.0 mΩ 1 Vgs=4.5V, Id=20A 14.0 22.0 Forward transconductance Gfs Vds=15V, Id=20A 40 S 1 Diode forward voltage Vsd If=20A, Vgs=0V 1.3 V 1 Max. body-diode continuous current Is 14 A DYNAMIC PARAMETERS Input capacitance Ciss Vgs=0V, Vds=20V, f=1MHz 2370 pF Output capacitance Coss 388 pF Reverse transfer capacitance Crss 249 pF Gate resistance Rg Vgs=0V, Vds=0V, f=1MHz 1 Ω SWITCHING PARAMETERS Total gate charge (Vgs=10V) Qg Vds=20V, Vgs=10V, Id=20A 44 nC 2 Total gate charge (Vgs=4.5V) 20 nC 2 Gate-source charge Qgs 11 nC 2 Gate-drain charge Qgd 10 nC 2 Turn-on delay time td(on) Vds=20V, RL=1Ω, Id=20A, Vgs=10V, Rgen=6Ω 19 ns 2 Turn-on rise time tr 18 ns 2 Turn-off delay time td(off) 58 ns 2 Turn-off fall time tf 20 ns 2 Body diode reverse recovery time trr If=20A, dIf/dt=100A/μs 32 ns Body diode reverse recovery charge Qrr 19 nC Single N-channel MOSFET NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. Ta=25°C. Unless otherwise noted. |
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