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ELM5B801QA-N Datasheet(PDF) 1 Page - ELM Technology Corporation |
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ELM5B801QA-N Datasheet(HTML) 1 Page - ELM Technology Corporation |
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1 / 5 page  1 ELM5B801QA-N 5 - ■General description ■Features ■Maximum absolute ratings ■Thermal characteristics Parameter Symbol Typ. Max. Unit Maximum junction-to-ambient Steady-state Rθja 120 °C/W Parameter Symbol Limit Unit Drain-source voltage Vds -20 V Gate-source voltage Vgs ±12 V Continuous drain current Ta=25°C Id -4.5 A Ta=70°C -3.8 Pulsed drain current Idm -12 A Power dissipation Tc=25°C Pd 6.5 W Tc=70°C 4.2 Junction and storage temperature range Tj, Tstg -55 to 150 °C ELM5B801QA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. Dual P-channel MOSFET S1 G1 D1 S2 G2 D2 ■Pin configuration ■Circuit DFN6-2x2(TOP VIEW) Pin No. Pin name 1 SOURCE1 2 GATE1 3 DRAIN2 4 SOURCE2 5 GATE2 6 DRAIN1 • Vds=-20V • Id=-4.5A, Rds(on)=96mΩ (Vgs=-4.5V) • Id=-3.8A, Rds(on)=128mΩ (Vgs=-2.5V) • Id=-2.5A, Rds(on)=180mΩ (Vgs=-1.8V) Ta=25°C. Unless otherwise noted. |
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