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LMG3410 Datasheet(PDF) 6 Page - Texas Instruments

Part # LMG3410
Description  600-V 12-A Single Channel GaN Power Stage
Download  33 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LMG3410 Datasheet(HTML) 6 Page - Texas Instruments

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6
LMG3410
SNOSD10A – APRIL 2016 – REVISED JUNE 2016
www.ti.com
Product Folder Links: LMG3410
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
6.6 Switching Characteristics
over operating free-air temperature range, 9.5 V < VDD < 18 V, VNEG = -14 V, VBUS = 400 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
GaN FET
dv/dt
Turn-on Drain Slew Rate
RDRV = 15 kΩ
100
V/ns
RDRV = 40 kΩ
50
RDRV = 100 kΩ
25
Δdv/dt
Slew Rate Variation
turn on, IL = 5 A, RDRV = 40 kΩ
25%
dv/dt
Edge Rate Immunity
Drain dv/dt, device remains off
inductor-fed, max di/dt = 10 A/ns
150
V/ns
STARTUP
tSTART
Startup Time, VIN rising above UVLO
Time until gate responds to IN CNEG
= 2.2 µF, CLDO = 1 µF
2
ms
DRIVER
tpd,on
Propagation delay, turn on
IN rising to IDS > 10 mA, VDS = 100 V
RDRV = 40 kΩ, VNEG = -14 V
20
ns
tdelay,on
Turn on delay time
IDS > 1 A to VDS < 320 V, RDRV = 40
k
Ω
12
ns
trise
Rise Time
VDS = 320 V to VDS = 80 V, ID = 5 A
4.2
ns
tpd,off
Propagation delay, turn off
IN falling to VDS > 10 V; ID = 5 A
36
ns
tfall
Fall Time
VDS = 80 V to VDS = 320 V, ID = 5 A
15
ns
FAULT
tcurr
Current Fault Delay
IDS > ITH to FAULT low
50
ns
tblank
Current Fault Blanking Time
20
ns
treset
Fault reset time
IN held low
350
µs


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