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MTB080C10Q8-0-T3-G Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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MTB080C10Q8-0-T3-G Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
2 / 12 page CYStech Electronics Corp. Spec. No. : C703Q8 Issued Date : 2016.07.22 Revised Date : Page No. : 2/12 MTB080C10Q8 CYStek Product Specification Absolute Maximum Ratings (Ta=25 °C) Limits Parameter Symbol N-channel P-channel Unit Drain-Source Breakdown Voltage BVDSS 100 -100 Gate-Source Voltage VGS ± 20 ± 20 V Continuous Drain Current @TA=25 °C (Note 2) 2.9 -1.9 Continuous Drain Current @TA=70 °C (Note 2) ID 2.3 -1.5 Pulsed Drain Current (Note 1) IDM 12 -8 A Power Dissipation for Dual Operation 2 1.6 (Note 2) Power Dissipation for Single Operation PD 0.9 (Note 3) W Operating Junction and Storage Temperature Range Tj; Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 40 78 (Note 2) Thermal Resistance, Junction-to-ambient, max RθJA 135 (Note 3) °C/W Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s. 3.Surface mounted on minimum copper pad, pulse width≤10s. N-Channel Electrical Characteristics (Tj=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - VGS=0V, ID=250μA VGS(th) 1.0 - 2.5 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V, VDS=0V - - 1 VDS=80V, VGS=0V IDSS - - 10 μA VDS=80V, VGS=0V, Tj=55 °C - 74 96 VGS=10V, ID=3A *RDS(ON) - 90 120 m Ω VGS=4.5V, ID=3A *GFS - 5.9 - S VDS=10V, ID=3A Dynamic Ciss - 333 - Coss - 47 - Crss - 18 - pF VDS=50V, VGS=0V, f=1MHz *td(ON) - 6.2 9.3 *tr - 17.4 25.8 *td(OFF) - 18.2 27.3 *tf - 6.8 10.2 ns VDS=50V, ID=1A, VGS=10V, RG=3Ω |
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