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IRLR2905 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRLR2905
Description  HEXFET Power MOSFET
Download  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRLR2905 Datasheet(HTML) 1 Page - International Rectifier

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IRLR/U2905
HEXFET® Power MOSFET
S
D
G
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.4
RθJA
Case-to-Ambient (PCB mount)**
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
Thermal Resistance
VDSS = 55V
RDS(on) = 0.027Ω
ID = 42A
…
Description
12/8/00
www.irf.com
1
D -P ak
T O -252 A A
I-P ak
TO -25 1A A
l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Surface Mount (IRLR2905)
l Straight Lead (IRLU2905)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
42
…
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
30
A
IDM
Pulsed Drain Current

160
PD @TC = 25°C
Power Dissipation
110
W
Linear Derating Factor
0.71
W/°C
VGS
Gate-to-Source Voltage
± 16
V
EAS
Single Pulse Avalanche Energy
‚
210
mJ
IAR
Avalanche Current

25
A
EAR
Repetitive Avalanche Energy

11
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
PD- 91334E


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