2

■Electrical Characteristics (N-ch)

Parameter

Symbol

Conditions

Min. Typ. Max. Unit Note

STATIC PARAMETERS

Drain-source breakdown voltage

BVdss Id=10mA, Vgs=0V

40

V

Zero gate voltage drain current

Idss Vds=32V

Vgs=0V

1

μA

Ta=55°C

5

Gate-body leakage current

Igss Vds=0V, Vgs=±20V

±100 nA

Gate threshold voltage

Vgs(th) Vds=Vgs, Id=250μA

1.5

2.3

3.0

V

On state drain current

Id(on) Vgs=10V, Vds=5V

20

A

Static drain-source on-resistance

Rds(on)

Vgs=10V

Id=6A

23.2 31.0

mΩ

Ta=125°C

36.0 48.0

Vgs=4.5V, Id=5A

32.6 45.0

Forward transconductance

Gfs Vds=5V, Id=6A

22

S

Diode forward voltage

Vsd Is=1A, Vgs=0V

0.77 1.00

V

Max.body-diode continuous current

Is

2.5

A

Pulsed body-diode current

Ism

20

A

2

DYNAMIC PARAMETERS

Input capacitance

Ciss

Vgs=0V, Vds=20V, f=1MHz

404

500

pF

Output capacitance

Coss

95

120

pF

Reverse transfer capacitance

Crss

37

50

pF

Gate resistance

Rg

Vgs=0V, Vds=0V, f=1MHz

2.7

4.0

Ω

SWITCHING PARAMETERS

Total gate charge (10V)

Qg

Vgs=10V, Vds=20V

Id=6A

8.3

10.0 nC

Total gate charge (4.5V)

Qg

4.2

5.1

nC

Gate-source charge

Qgs

1.3

2.0

nC

Gate-drain charge

Qgd

2.3

3.0

nC

Turn-on delay time

td(on)

Vgs=10V, Vds=20V

RL=3.3Ω, Rgen=3Ω

4.2

5.5

ns

Turn-on rise time

tr

3.3

4.5

ns

Turn-off delay time

td(off)

15.6 21.0

ns

Turn-off fall time

tf

3.0

4.0

ns

Body-diode reverse recovery time

trr

If=6A, dIf/dt=100A/μs

20.5 27.0

ns

Body-diode reverse recovery charge

Qrr If=6A, dIf/dt=100A/μs

14.5 19.0 nC

ELM14614AA-N

7 -

NOTE :

1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment

with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is

based on the t ≤ 10s themal resistance rating.

2. Repetitive rating, pulse width limited by junction temperature.

3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.

4. The static characteristics in Figures 1 to 6 are obtained using<300μs pulses, duty cycle 0.5%max.

5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment

with Ta=25°C. The SOA curve provides a single pulse rating.

Complementary MOSFET

Ta=25°C. Unless otherwise noted.