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ELM14614AA-N Datasheet(PDF) 2 Page - ELM Electronics |
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ELM14614AA-N Datasheet(HTML) 2 Page - ELM Electronics |
2 / 7 page 2 ■Electrical Characteristics (N-ch) Parameter Symbol Conditions Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=10mA, Vgs=0V 40 V Zero gate voltage drain current Idss Vds=32V Vgs=0V 1 μA Ta=55°C 5 Gate-body leakage current Igss Vds=0V, Vgs=±20V ±100 nA Gate threshold voltage Vgs(th) Vds=Vgs, Id=250μA 1.5 2.3 3.0 V On state drain current Id(on) Vgs=10V, Vds=5V 20 A Static drain-source on-resistance Rds(on) Vgs=10V Id=6A 23.2 31.0 mΩ Ta=125°C 36.0 48.0 Vgs=4.5V, Id=5A 32.6 45.0 Forward transconductance Gfs Vds=5V, Id=6A 22 S Diode forward voltage Vsd Is=1A, Vgs=0V 0.77 1.00 V Max.body-diode continuous current Is 2.5 A Pulsed body-diode current Ism 20 A 2 DYNAMIC PARAMETERS Input capacitance Ciss Vgs=0V, Vds=20V, f=1MHz 404 500 pF Output capacitance Coss 95 120 pF Reverse transfer capacitance Crss 37 50 pF Gate resistance Rg Vgs=0V, Vds=0V, f=1MHz 2.7 4.0 Ω SWITCHING PARAMETERS Total gate charge (10V) Qg Vgs=10V, Vds=20V Id=6A 8.3 10.0 nC Total gate charge (4.5V) Qg 4.2 5.1 nC Gate-source charge Qgs 1.3 2.0 nC Gate-drain charge Qgd 2.3 3.0 nC Turn-on delay time td(on) Vgs=10V, Vds=20V RL=3.3Ω, Rgen=3Ω 4.2 5.5 ns Turn-on rise time tr 3.3 4.5 ns Turn-off delay time td(off) 15.6 21.0 ns Turn-off fall time tf 3.0 4.0 ns Body-diode reverse recovery time trr If=6A, dIf/dt=100A/μs 20.5 27.0 ns Body-diode reverse recovery charge Qrr If=6A, dIf/dt=100A/μs 14.5 19.0 nC ELM14614AA-N 7 - NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using<300μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. Complementary MOSFET Ta=25°C. Unless otherwise noted. |
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