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FDM3300NZ Datasheet(HTML) 5 Page - Fairchild Semiconductor

Part No. FDM3300NZ
Description  Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDM3300NZ Datasheet(HTML) 5 Page - Fairchild Semiconductor

   
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FDM3300NZ Rev E3 (W)
PSPICE Electrical Model N-Channel
.SUBCKT FDM3300NZ 2 1 3
*NOM TEMP=25 DEG C
*FEB 26, 2003
CA 12 8 1E-9
CB 15 14 1.2E-9
CIN 6 8 10.8E-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 23.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LGATE 1 9 3.84E-9
LDRAIN 2 5 1.00E-9
LSOURCE 3 7 4E-9
RLGATE 1 9 38.4
RLDRAIN 2 5 10
RLSOURCE 3 7 40
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 8.3E-3
RGATE 9 20 4.2
RSLC1 5 51 RSLCMOD 1E-6
RSLC2 5 50 1E3
RSOURCE 8 7 RSOURCEMOD 3.9E-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1E-6*115),3))}
.MODEL DBODYMOD D (IS=2E-12 RS=9.9E-3 N=0.90 TRS1=2.1E-3 TRS2=1.0E-6 CJO=4.5E-10 TT=1E-9 M=0.45 IKF=0.3 XTI=2.0)
.MODEL DBREAKMOD D (RS=1E-1 TRS1=1.12E-3 TRS2=1.25E-6)
.MODEL DPLCAPMOD D (CJO=45E-11 IS=1E-30 N=10 M=0.4)
.MODEL MMEDMOD NMOS (VTO=1.05 KP=8 IS=1E-30 N=10 TOX=1 L=1U W=1U RG=4.2)
.MODEL MSTROMOD NMOS (VTO=1.31 KP=82 IS=1E-30 N=10 TOX=1 L=1U W=1U)
.MODEL MWEAKMOD NMOS (VTO=0.81 KP=0.05 IS=1E-30 N=10 TOX=1 L=1U W=1U RG=42 RS=.1)
.MODEL RBREAKMOD RES (TC1=0.56E-3 TC2=1.00E-7)
.MODEL RDRAINMOD RES (TC1=4.6E-3 TC2=10E-6)
.MODEL RSLCMOD RES (TC1=2.5E-3 TC2=8E-6)
.MODEL RSOURCEMOD RES (TC1=1.0E-3 TC2=1E-6)
.MODEL RVTHRESMOD RES (TC1=-1.85E-3 TC2=-7E-6)
.MODEL RVTEMPMOD RES (TC1=-0.7E-3 TC2=0.50E-6)
.MODEL S1AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-4 VOFF=-3)
.MODEL S1BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-3 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-1.0 VOFF=0.6)
.MODEL S2BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=0.6 VOFF=-1.0)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET
Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by
William J. Hepp and C. Frank Wheatley.
18
22
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6
8
+
-
5
51
19
8
+
-
17
18
6
8
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-
5
8
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RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
11
7
3
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
10
5
51
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
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-
+
-
+
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