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FDM3300NZ Datasheet(HTML) 2 Page - Fairchild Semiconductor

Part No. FDM3300NZ
Description  Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
Download  8 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FDM3300NZ Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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FDM3300NZ Rev E3 (W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
VGS = 0 V,
ID = 250 µA
20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
10.7
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
1
µA
IGSS
Gate–Body Leakage,
VGS = ±12 V,
VDS = 0 V
±10
µA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250 µA
0.6
0.9
1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
–3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
ID = 10A
VGS = 2.5 V,
ID = 9 A
VGS = 4.5 V, ID = 10A, TJ=125°C
16
20
22
23
28
31
m
ID(on)
On–State Drain Current
VGS = 2.5 V,
VDS = 5 V
10
A
gFS
Forward Transconductance
VDS = 5 V,
ID =10 A
35
S
Dynamic Characteristics
Ciss
Input Capacitance
1210
pF
Coss
Output Capacitance
330
pF
Crss
Reverse Transfer Capacitance
VDS = 10 V,
V GS = 0 V,
f = 1.0 MHz
180
pF
RG
Gate Resistance
V GS = 0 V,
f = 1.0 MHz
2.3
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
10
20
ns
tr
Turn–On Rise Time
14
25
ns
td(off)
Turn–Off Delay Time
26
42
ns
tf
Turn–Off Fall Time
VDD = 10 V,
ID = 1 A,
VGS = 4.5 V,
RGEN = 6 Ω
13
23
ns
Qg
Total Gate Charge
12
17
nC
Qgs
Gate–Source Charge
2
nC
Qgd
Gate–Drain Charge
VDS = 10 V,
ID = 10 A,
VGS = 4.5 V
4
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 2 A
(Note 2)
0.7
1.2
V
trr
Diode Reverse Recovery Time
20
nS
Qrr
Diode Reverse Recovery Charge
IF = 10 A,
diF/dt = 100 A/µs
6
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC are guaranteed by design while RθJA is
determined by the user's board design.
(a). RθJA = 52°C/W when mounted on a 1in
2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b). RθJA = 108°C/W when mounted on a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%


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