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KMM366S403CTL-G0 Datasheet(PDF) 8 Page - Samsung semiconductor |
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KMM366S403CTL-G0 Datasheet(HTML) 8 Page - Samsung semiconductor |
8 / 11 page PC66 SDRAM MODULE KMM366S403CTL REV. 3 Mar. '98 1. Parameters depend on programmed CAS latency. 2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]ns should be added to the parameter. Notes : AC CHARACTERISTICS (AC operating conditions unless otherwise noted) REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE. Parameter Symbol -0 Unit Note Min Max CLK cycle time CAS latency=3 tCC 10 1000 ns 1 CAS latency=2 13 CLK to valid output delay CAS latency=3 tSAC 7 ns 1,2 CAS latency=2 8 Output data hold time CAS latency=3 tOH 3 ns 2 CAS latency=2 3 CLK high pulse width tCH 3.5 ns 3 CLK low pulse width tCL 3.5 ns 3 Input setup time tSS 2.5 ns 3 Input hold time tSH 1 ns 3 CLK to output in Low-Z tSLZ 1 ns 2 CLK to output in Hi-Z CAS latency=3 tSHZ 7 ns CAS latency=2 8 |
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