1

3

2

PIN

10.2± 0.2

4.0± 0.3

2.6± 0.15

1.4± 0.1

0.6± 0.1

4.5± 0.2

3.1

+0.2

-0.1

2.6± 0.2

0.6± 0.1

FEATURES

MECHANICAL DATA

Position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

am bient tem perature unless otherwise specified.

UNITS

Maximum recurrent peak reverse voltage

V

Maximum RMS Voltage

V

Maximum DC blocking voltage

V

A

Peak forw ard surge current 8.3ms single half

A

Maximum forw ard

voltage per leg

(NOTE 1)

Maximum reverse current

@T

at rated DC blocking voltage

@T

Maximum thermal resistance

(NOTE 2)

/W

Operating junction temperature range

Storage temperature range

2. Thermal resistance f rom junction to case and thermal resistance f rom junction to ambient.

m A

35

45

50

60

1

6.0

150.0

25

32

35

42

MBR

F

1

660CT

MBR

F

1

645CT

MBR

F

1

650CT

35

45

50

60

VOLTAGE RANGE: 35 - 60 V

CURRENT: 16 A

Metal silicon junction, m ajority carrier conduction.

Case:JEDEC

ITO-220AB,molded plastic body

DUAL SCHOTTKY RECTIFIERS

High current capacity, low forward voltage drop.

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

-

55 ---- + 175

-

55 ---- + 150

Term inals:Leads, solderable per MIL-STD-750,

1 1

Method 2026

0.

2

1.0

1.5

ITO-220AB

MBRF1635CT---MBRF1660CT

MBR

F

1

635CT

Guard ring for over voltage protection.

High surge capacity.

For use in low voltage, high frequency inverters, free

Polarity: As m arked

Weight:

0.08ounce, 2.24 grams

40

50

V

0.

63

0.

57

0.75

0.65

Dimensions in millimeters

Diode Semiconductor Korea

www.diode.kr