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HV311LG-G Datasheet(PDF) 7 Page - Supertex, Inc

Part # HV311LG-G
Description  Hot Swap Controller
Download  17 Pages
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Manufacturer  SUTEX [Supertex, Inc]
Direct Link  http://www.supertex.com
Logo SUTEX - Supertex, Inc

HV311LG-G Datasheet(HTML) 7 Page - Supertex, Inc

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HV311
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
Startup Timer
The startup timer limits the startup to 100ms. Should there
be an overload or short circuit during startup, then the exter-
nal pass transistor will carry current for no more than 100ms.
Upon tripping of the timer the RAMP and GATE voltages
reset to zero, and the autoretry timer starts if enabled.
Circuit Breaker
The circuit breaker trips in less than 5.0μs when the voltage
across the sense resistor reaches 100mV. Upon tripping of
the circuit breaker the RAMP and GATE voltages reset to
zero, and the autoretry timer starts if enabled.
Autoretry Timer
The retry interval is determined by charging and discharg-
ing the C
RAMP capacitor 256 times. One cycle corresponds to
charging of C
RAMP to 8.0V with a current of 2.5μA, and subse-
quent discharging to zero with a current of 2.5μA. Hence:
I
CHARGE · tCYCLE = CRAMP · 2 · ΔV
t
CYCLE = (10n)(2)(8)/(2.5μ)
t
CYCLE = 64ms
t
AUTORETRY = (256)(64m)
t
AUTORETRY = 16.4s
The autoretry timer can be disabled by adding a resistor at
the RAMP pin. A resistor which keeps the RAMP voltage
from rising to 8.0V will keep the timer from counting. This
can accomplished by adding a resistor at the RAMP pin with
a value of about 2.5MΩ. Note that this resistor forms an ad-
ditional load during the startup, thereby causing the time in-
tervals to increase somewhat.
Kelvin Connections
In order to make an accurate measurement of power supply
current it is advisable to make use of Kelvin connections.
The idea is to not incur voltage drops in the sense leads due
to the main power supply current. See diagram below.
Paralleling External MOSFETs
Equal current sharing may not be achievable due to the tol-
erance issues with the threshold voltage and gain charac-
teristics of the MOSFETs. Paralleling of devices is not rec-
ommended. The issues with paralleling can be alleviated by
using resistor ballasting.
For this application the HV311 with active low PWRGD is
recommended where the PWRGD pins of multiple hot swap
circuits can be connected in a wired OR configuration.
To Negative
Terminal of
Power Source
To Source
of MOSFET
To
V
EE
Pin
Sense Resistor
To
SENSE
Pin


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