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RS1B Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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RS1B Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
2 / 2 page Lead Temperature ( °C) Fig. 1 — Forward Current Derating Curve Fig. 3 — Typical Instantaneous Forward Characteristics Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 4 — Typical Reverse Characteristics Fig. 6 — Typical Transient Thermal Impedance Number of Cycles at 60 HZ t, Pulse Duration (sec.) Fig. 2 — Maximum Non-Repetitive Peak Forward Surge Current Reverse Voltage (V) Fig. 5 — Typical Junction Capacitance 0 20 40 60 80 100 120 140 160 180 0 0.5 1.0 1.2 Resistive or Inductive Load 1 10 100 0 10 20 30 40 50 TL = 90 °C 8.3ms Single Half Sine-Wave (JEDEC Method) 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.01 0.1 1 10 30 Pulse Width = 300 µs 1% Duty Cycle 0 20 40 60 80 100 0.01 0.1 1 10 30 1 10 100 1 10 30 TJ = 25°C f = 1.0MHZ Vsig = 50mVp-p 0.01 0.1 1 10 1 10 100 Mounted on 0.2 x 0.2" (5 x 5mm) Copper Pad Area P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas TJ = 25°C TJ = 100°C TJ = 125 °C TJ = 125°C TJ = 25 °C RS1A- - -RS1M www.diode.kr Diode Semiconductor Korea |
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