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TLV2211IDBVT Datasheet(PDF) 1 Page - Texas Instruments |
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TLV2211IDBVT Datasheet(HTML) 1 Page - Texas Instruments |
1 / 31 page SLOS156E − MAY 1996 − REVISED SEPTEMBER 2006 TLV2211, TLV2211Y Advanced LinCMOS RAILTORAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS 1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 D Output Swing Includes Both Supply Rails D Low Noise . . . 21 nV/√Hz Typ at f = 1 kHz D Low Input Bias Current ...1 pA Typ D Very Low Power ...11 µA Per Channel Typ D Common-Mode Input Voltage Range Includes Negative Rail D Wide Supply Voltage Range 2.7 V to 10 V D Available in the SOT-23 Package D Macromodel Included description The TLV2211 is a single low-voltage operational amplifier available in the SOT-23 package. It consumes only 11 µA (typ) of supply current and is ideal for battery-power applications. Looking at Figure 1, the TLV2211 has a 3-V noise level of 22 nV/ √Hz at 1kHz; 5 times lower than competitive SOT-23 micropower solutions. The device exhibits rail-to-rail output performance for in- creased dynamic range in single- or split-supply applications. The TLV2211 is fully characterized at 3 V and 5 V and is optimized for low-voltage applications. The TLV2211, exhibiting high input impedance and low noise, is excellent for small-signal conditioning for high-impedance sources, such as piezoelectric transducers. Because of the micro- power dissipation levels combined with 3-V operation, these devices work well in hand-held monitoring and remote-sensing applications. In addition, the rail-to-rail output feature with single or split supplies makes this family a great choice when interfacing with analog-to-digital converters (ADCs). AVAILABLE OPTIONS TA VIOmax AT 25°C PACKAGED DEVICES SYMBOL CHIP FORM‡ TA VIOmax AT 25°C SOT-23 (DBV)† SYMBOL CHIP FORM‡ (Y) 0 °C to 70°C 3 mV TLV2211CDBV VACC TLV2211Y −40 °C to 85°C 3 mV TLV2211IDBV VACI TLV2211Y † The DBV package available in tape and reel only. ‡ Chip forms are tested at TA = 25°C only. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. DBV PACKAGE (TOP VIEW) 5 4 3 1 2 IN − VDD−/GND IN + VDD+ OUT f − Frequency − Hz EQUIVALENT INPUT NOISE VOLTAGE† vs FREQUENCY 40 30 20 0 60 50 10 VDD = 3 V RS = 20 Ω TA = 25°C 70 80 101 102 103 104 Figure 1. Equivalent Input Noise Voltage Versus Frequency † All loads are referenced to 1.5 V. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright 2001−2006, Texas Instruments Incorporated Advanced LinCMOS is a trademark of Texas Instruments. |
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