FEATURES

Metal-Semiconductor junction with guard ring

TO - 220AC

Epitaxial construction

Low forward voltage drop,low switching losses

High surge capability

MECHANICAL DATA

Case:JEDEC TO--220AC,molded plastic

Terminals: Solderable per

MIL- STD-750,Method 2026

Polarity: As marked

Weight: 0.064 ounces,1.81 gram

Mounting position: Any

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.

SR

1090

SR

10100

Maximum recurrent peak reverse voltage

V

Maximum RMS voltage

V

Maximum DC blocking voltage

V

Maximum average forw ard rectified current

℃

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

T

Maximum instantaneous

forw ard voltage (Note1)

V

Maximum reverse current

@T

at rated DC blocking voltage @T

Typical thermal resistance

(Note2)

/W

Operating junction temperature range

Storage temperature range

Note: 1. Pulse test:300us pulse width,1% duty cy cle.

-55 --- + 150

90

100

90

100

63

70

2. Thermal resistance junction to case.

mA

0.1

A

-55 --- + 175

2.0

0.80

150.0

6.0

SR1090---SR10100

A

For use in low voltage,high frequency inverters free

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 90 --- 100 V

CURRENT: 10 A

The plastic material carries U/L recognition 94V-0

10.0

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Dimensions in millimeters

UNITS

0.95

1

2

10.2± 0.2

PIN

0.9± 0.1

5.0± 0.1

2.6± 0.2

0.5± 0.1

1.4± 0.2

4.5± 0.2

φ 3.8± 0.15

Diode Semiconductor Korea

www.diode.kr