TLV2354, TLV2354Y

LinCMOS

™ QUADRUPLE LOW-VOLTAGE DIFFERENTIAL COMPARATORS

SLCS012C – MAY 1992 – REVISED AUGUST 2000

1

POST OFFICE BOX 655303

2 V to 8 V

240

µA Typ at 3 V

Includes Ground

TTL-Level Input Step

5 pA Typ

CMOS

description

The TLV2354 consists of four independent,

low-power comparators specifically designed for

single power-supply applications and operateS

with power-supply rails as low as 2 V. When

powered from a 3-V supply, the typical supply

current is only 240

µA.

The TLV2354 is designed using the Texas Instruments LinCMOS

™ technology and, therefore, features an

Ω), which allows direct interfacing with

high-impedance sources. The outputs are N-channel open-drain configurations that require an external pullup

resistor to provide a positive output voltage swing, and they can be connected to achieve positive-logic

wired-AND relationships. The TLV2354I is fully characterized for operation from – 40

°C to 85°C. The TLV2354M

is fully characterized for operation from – 55

°C to 125°C.

The TLV2354 has internal electrostatic-discharge (ESD)-protection circuits and has been classified with a

1000-V ESD rating using human body model testing. However, care should be exercised in handling this device

as exposure to ESD may result in degradation of the device parametric performance.

AVAILABLE OPTIONS

PACKAGED DEVICES

CHIP

TA

VIOmax

at 25

°C

SMALL

OUTLINE

(D)†

CHIP

CARRIER

(FK)

CERAMIC

DIP

(J)

PLASTIC

DIP

(N)

TSSOP

(PW)‡

CERAMIC

FLATPACK

(W)

CHIP

FORM

(Y)

–40

°C to

85

°C

5 mV

TLV2354ID

—

—

TLV2354IN

TLV2354IPW

—

TLV2354Y

–55

°C to

125

°C

5 mV

—

TLV2354MFK

TLV2354MJ

—

—

TLV2354MW

TLV2354Y

† The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLV2352IDR).

‡ The PW packages are only available left-ended taped and reeled (e.g., TLV2354IPW).

These devices have limited built-in protection. The leads should be shorted together or the device placed in conductive foam during

storage or handling to prevent electrostatic damage to the MOS gates.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Copyright

© 2000, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

LINCMOS is a trademark of Texas Instruments.

OUT

symbol (each comparator)

IN +

IN –

On products compliant to MIL-PRF-38535, all parameters are tested

unless otherwise noted. On all other products, production

processing does not necessarily include testing of all parameters.