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AN-7510 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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AN-7510 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 13 page ©2002 Fairchild Semiconductor Corporation Application Note 7510 Rev. A1 and compared to the measured response. Switching wave- forms of the power MOSFET are also modelled and com- pared to the measured results. SYNCHRONOUS RECTIFIER The schematic of a synchronous rectifier circuit is shown in Figure 2. The rectifier power MOSFETs are a pair of cross coupled RFH75N05 megafet devices. Conduction is offered by a forward gate bias with negative drain current (third quadrant mosfet operation) and voltage blocking is assured by a slightly negative gate bias for first quadrant MOSFET operation. VM1 to VM4 are voltage sources of zero potential and are used to permit a recording of branch currents. The trans- former secondary normally used in a supply of this sort is represented by voltage source V1 and leakage inductance L2. Filter inductor L1 and capacitor C1 provide energy stor- age and smoothing for the 100KHz square wave of V1. Rise and fall times of the square wave are not critical, but were set at 40ns. Gate coupling resistors R1 and R2 are somewhat critical, in that too high a value will restrict the conduction transition time of the MOSFET. Alternatively, a value too low will permit a high voltage drain spike to appear on the gate of the MOSFET. The calculated output voltage turn on transient is shown in Figure 3. Of course this represents a feed forward circuit response only. In practice, the modelled drive circuit with pulse width modulation and feedback would provide a much faster response which would be slew rate limited. The ripple voltage is 5mV RMS. The efficiency for this portion of the synchronous rectifier circuit is plotted in Figure 4 as a function of temperature from -25oC to 150oC. As a convenience, the equation used by PROBE (PSPICE's waveform plotter routine) is included. This equation yields a solution rapidly. Transition voltage waveforms of the input voltage, one drain voltage, and one gate voltage are plotted in Figure 5. The value of drain voltage during third quadrant conduction is approximately -0.2 volts. Other waveforms are readily available by use of the PSPICE system. L2 10 9 2 4 5 V1 L1 20 µh 2m Ω C1 100 µF R4 0.25 Ω + - VM3 VM4 VM1 VM2 XM1 RFH75N05 XM2 RFH75N05 3 1 R3 - + - + - + - + 8 40nh R2 5 Ω R1 5 Ω 6 7 11 8 FIGURE 2. SYNCHRONOUS RECTIFIER CIRCUIT 5 3 1 100 200 300 TIME ( µs) POWER OUT = 100W FREQUENCY = 100kHz T = +25oC FIGURE 3. RECTIFIER OUTPUT VOLTAGE 050 100 AMBIENT TEMPERATURE (oC) 98 96 94 92 POWER OUT = 100W FREQUENCY = 100kHz EFF = (1/(1 + AVG(AVG(I(VM4) * V(8) + I(VM3) * V(7) + I(R3) * V(4.5) ))/AVG(AVG(I(R4) * V(5)))) FIGURE 4. RECTIFIER EFFICIENCY 20 10 0 -10 100 300 5100 5300 TIME (ns) V(9.2) V(7) V(3) TC = +25 oC INPUT V(9.2) GATE V(3) DRAIN V(7) FIGURE 5. TRANSITION VOLTAGE WAVEFORMS Application Note 7510 |
Similar Part No. - AN-7510 |
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Similar Description - AN-7510 |
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