2003 Aug 05

3

Philips Semiconductors

Product specification

Low capacitance double ESD protection diode

PESDxL2UM series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Non-repetitive current pulse 8/20

µs exponential decay waveform; see Fig.5.

2. Pins 1 and 3 or 2 and 3.

3. Pins 1 and 2.

4. Device mounted on standard printed-circuit board.

ESD standards compliance

THERMAL CHARACTERISTICS

Notes

1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60

µm copper strip line.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

peak pulse current

8/20

µs pulse; notes 1, 2 and 3

PESD3V3L2UM

−

3A

PESD5V0L2UM

−

2.5

A

peak pulse power

8/20

µs pulse; notes 1, 2 and 3

−

30

W

non-repetitive peak forward current

−

3.5

A

non-repetitive peak reverse current

PESD3V3L2UM

−

0.9

A

PESD5V0L2UM

−

0.8

A

total power dissipation

−

250

mW

non-repetitive peak reverse power

dissipation

−

6W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

ESD

electrostatic discharge

IEC 61000-4-2 (contact discharge)

15

−

kV

HBM MIL-Std 883

10

−

kV

IEC 61000-4-2, level 4 (ESD)

>15 kV (air); >8 kV (contact)

HBM MIL-Std 883, class 3

>4 kV

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

all diodes loaded; note 1

500

K/W

one diode loaded; note 2

290

K/W