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PESDXL2UM Datasheet(PDF) 3 Page - NXP Semiconductors |
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PESDXL2UM Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 9 page 2003 Aug 05 3 Philips Semiconductors Product specification Low capacitance double ESD protection diode PESDxL2UM series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5. 2. Pins 1 and 3 or 2 and 3. 3. Pins 1 and 2. 4. Device mounted on standard printed-circuit board. ESD standards compliance THERMAL CHARACTERISTICS Notes 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line. 2. FR4 single-sided copper 1 cm2. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode Ipp peak pulse current 8/20 µs pulse; notes 1, 2 and 3 PESD3V3L2UM − 3A PESD5V0L2UM − 2.5 A Ppp peak pulse power 8/20 µs pulse; notes 1, 2 and 3 − 30 W IFSM non-repetitive peak forward current tp = 1 ms; square pulse − 3.5 A IZSM non-repetitive peak reverse current tp = 1 ms; square pulse PESD3V3L2UM − 0.9 A PESD5V0L2UM − 0.8 A Ptot total power dissipation Tamb =25 °C; note 4 − 250 mW PZSM non-repetitive peak reverse power dissipation tp = 1 ms; square pulse; see Fig.4 − 6W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C ESD electrostatic discharge IEC 61000-4-2 (contact discharge) 15 − kV HBM MIL-Std 883 10 − kV IEC 61000-4-2, level 4 (ESD) >15 kV (air); >8 kV (contact) HBM MIL-Std 883, class 3 >4 kV SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient all diodes loaded; note 1 500 K/W one diode loaded; note 2 290 K/W |
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