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SI4362DY-T1 Datasheet(PDF) 1 Page - Vishay Siliconix

Part # SI4362DY-T1
Description  N-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4362DY-T1 Datasheet(HTML) 1 Page - Vishay Siliconix

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FEATURES
D TrenchFETr Power MOSFET
D Optimized for “Low Side” Synchronous
Rectifier Operation
D 100% Rg Tested
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
Si4362DY
Vishay Siliconix
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
30
0.0045 @ VGS = 10 V
20
30
0.0055 @ VGS = 4.5 V
19
SO-8
SD
SD
SD
GD
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Ordering Information: Si4362DY
Si4362DY-T1 (with Tape and Reel)
Si4362DY—E3 (Lead Free)
Si4362DY-T1—E3 (Lead Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)a
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"12
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
20
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
15
A
Pulsed Drain Current (10 ms Pulse Width)
IDM
60
A
Continuous Source Current (Diode Conduction)a
IS
2.9
Maximum Power Dissipationa
TA = 25_C
PD
3.5
W
Maximum Power Dissipationa
TA = 70_C
PD
2.2
W
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 150
THERMAL RESISTANCE RATINGSa
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
RthJA
29
35
_C/W
Maximum Junction-to-Foot (Drain)
RthJF
13
16
_C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board, t v 10 sec


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