BC449 datasheet(2/6 Pages) ONSEMI

Part #	BC449

Description	High Voltage Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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BC447, BC449, BC449A

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector - Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0)

BC447

BC449, BC449A

V(BR)CEO

80

100

-

Vdc

Collector - Base Breakdown Voltage

(IC = 100 µAdc, IE = 0)

BC447

BC449, BC449A

V(BR)CBO

80

100

-

Vdc

Emitter - Base Breakdown Voltage

(IE = 10 µAdc, IC = 0)

V(BR)EBO

5.0

-

Vdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

BC447

(VCB = 80 Vdc, IE = 0)

BC449, BC449A

ICBO

-

100

nAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

BC447, BC449

BC449A

(IC = 10 mAdc, VCE = 5.0 Vdc)

BC447, BC449

BC449A

(IC = 100 mAdc, VCE = 5.0 Vdc)

BC447, BC449

BC449A

hFE

50

120

50

100

50

60

-

460

220

-

Collector - Emitter Saturation Voltage

(IC = 100 mAdc, IB = 10 mAdc)

VCE(sat)

-

0.125

0.25

Vdc

Base - Emitter Saturation Voltage

(IC = 100 mAdc, IB = 10 mAdc)

VBE(sat)

-

0.85

-

Vdc

Base - Emitter On Voltage

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

(IC = 100 mAdc, VCE = 5.0 Vdc) (Note 1)

VBE(on)

0.55

-

0.76

0.7

1.2

Vdc

DYNAMIC CHARACTERISTICS

Current - Gain - Bandwidth Product

(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

fT

100

200

-

MHz

1. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle 2%

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