©2004 Fairchild Semiconductor Corporation

FDD8870 / FDU8870 Rev. C

PSPICE Electrical Model

.SUBCKT FDD8870 2 1 3 ; rev July 2003

Ca 12 8 4.2e-9

Cb 15 14 4.2e-9

Cin 6 8 4.7e-9

Dbody 7 5 DbodyMOD

Dbreak 5 11 DbreakMOD

Dplcap 10 5 DplcapMOD

Ebreak 11 7 17 18 32.7

Eds 14 8 5 8 1

Egs 13 8 6 8 1

Esg 6 10 6 8 1

Evthres 6 21 19 8 1

Evtemp 20 6 18 22 1

It 8 17 1

Lgate 1 9 5e-9

Ldrain 2 5 1.0e-9

Lsource 3 7 2e-9

RLgate 1 9 50

RLdrain 2 5 10

RLsource 3 7 20

Mmed 16 6 8 8 MmedMOD

Mstro 16 6 8 8 MstroMOD

Mweak 16 21 8 8 MweakMOD

Rbreak 17 18 RbreakMOD 1

Rdrain 50 16 RdrainMOD 1.57e-3

Rgate 9 20 2.1

RSLC1 5 51 RSLCMOD 1e-6

RSLC2 5 50 1e3

Rsource 8 7 RsourceMOD 1.2e-3

Rvthres 22 8 RvthresMOD 1

Rvtemp 18 19 RvtempMOD 1

S1a 6 12 13 8 S1AMOD

S1b 13 12 13 8 S1BMOD

S2a 6 15 14 13 S2AMOD

S2b 13 15 14 13 S2BMOD

Vbat 22 19 DC 1

ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*500),10))}

.MODEL DbodyMOD D (IS=1.3E-11 IKF=10 N=1.01 RS=1.8e-3 TRS1=8e-4 TRS2=2e-7

+ CJO=2e-9 M=0.57 TT=1e-10 XTI=0.9)

.MODEL DbreakMOD D (RS=8e-2 TRS1=1e-3 TRS2=-8.9e-6)

.MODEL DplcapMOD D (CJO=1.6e-9 IS=1e-30 N=10 M=0.38)

.MODEL MmedMOD NMOS (VTO=1.76 KP=10 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.1 T_ABS=25)

.MODEL MstroMOD NMOS (VTO=2.2 KP=650 IS=1e-30 N=10 TOX=1 L=1u W=1u T_ABS=25)

.MODEL MweakMOD NMOS (VTO=1.47 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=21 RS=0.1 T_ABS=25)

.MODEL RbreakMOD RES (TC1=8.3e-4 TC2=-4e-7)

.MODEL RdrainMOD RES (TC1=2e-4 TC2=8e-6)

.MODEL RSLCMOD RES (TC1=9e-4 TC2=1e-6)

.MODEL RsourceMOD RES (TC1=8e-3 TC2=1e-6)

.MODEL RvthresMOD RES (TC1=-2e-3 TC2=-9.5e-6)

.MODEL RvtempMOD RES (TC1=-2.6e-3 TC2=2e-7)

.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3)

.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3 VOFF=-4)

.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2 VOFF=-0.5)

.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=-2)

.ENDS

Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global

Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank

Wheatley.

18

22

+

-

6

8

+

-

5

51

19

8

+

-

17

18

6

8

+

-

5

8

+

-

RBREAK

RVTEMP

VBAT

RVTHRES

IT

17

18

19

22

12

13

15

S1A

S1B

S2A

S2B

CA

CB

EGS

EDS

14

8

13

8

14

13

MWEAK

EBREAK

DBODY

RSOURCE

SOURCE

11

7

3

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES

16

21

8

MMED

MSTRO

DRAIN

2

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ESLC

RSLC1

10

5

51

50

RSLC2

1

GATE

RGATE

EVTEMP

9

ESG

LGATE

RLGATE

20

+

-

+

-

+

-

6