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SD107WS Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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SD107WS Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
2 / 3 page Silicon Epitaxial Planar Diode SD107WS ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Reverse breakdown voltage V(BR)R 30 V IR=100μA 300 IF=2mA 360 IF=15mA 470 550 IF=50mA Forward voltage VF 580 800 mV IF=100mA Reverse current IR 1.0 μA VR=25V Capacitance CT 7 pF VR=10V,f=1MHz PACKAGE OUTLINE Plastic surface mounted package SOD-323 SOD-323 Dim Min Max A 1.275 1.325 B 1.675 1.725 C 0.9 Typical D 0.25 0.35 E 0.27 0.37 H 0.02 0.1 J 0.1 Typical K 2.6 2.7 All Dimensions in mm E K H D C B A J www.diode.kr Diode Semiconductor Korea |
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