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TMS28F020-12C4FMLR Datasheet(PDF) 8 Page - Texas Instruments |
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TMS28F020-12C4FMLR Datasheet(HTML) 8 Page - Texas Instruments |
8 / 21 page TMS28F020 262144 BY 8 BIT FLASH MEMORY SMJS020C − OCTOBER 1994 − REVISED JANUARY 1998 8 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 program-verify command The TMS28F020 can be programmed sequentially or randomly because it is programmed one byte at a time. Each byte must be verified after it is programmed. The program-verify operation prepares the device to verify the most recently programmed byte. To invoke the program-verify operation, C0h must be written into the command register. The program-verify operation ends on the rising edge of W. While verifying a byte, the TMS28F020 applies an internal margin voltage to the designated byte. If the true data and programmed data match, programming continues to the next designated byte location; otherwise, the byte must be reprogrammed. Figure 2 shows how commands and bus operations are combined for byte programming. reset command To reset the TMS28F020 after set-up-erase command or set-up-program command operations without changing the contents in memory, write FFh into the command register two consecutive times. After executing the reset command, the device will default to the read mode. Fastwrite algorithm The TMS28F020 is programmed using the Texas Instruments Fastwrite algorithm shown in Figure 2. This algorithm programs in a nominal time of four seconds. Fasterase algorithm The TMS28F020 is erased using the Texas Instruments Fasterase algorithm shown in Figure 1. The memory array needs to be completely programmed (using the Fastwrite algorithm) before erasure begins. Erasure typically occurs in two seconds. parallel erasure To reduce total erase time, several devices can be erased in parallel. Since each Flash memory can erase at a different rate, every device must be verified separately after each erase pulse. After a given device has been successfully erased, the erase command should not be issued to this device again for this erase cycle. All devices that complete erasure should be masked until the parallel erasure process is finished (see Figure 3). Examples of how to mask a device during parallel erase include driving E high, writing the read command (00h) to the device when the others receive a set-up-erase or erase command, or disconnecting it from all electrical signals with relays or other types of switches. |
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