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TMS28F800ALB12BDCDE Datasheet(PDF) 2 Page - Texas Instruments |
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TMS28F800ALB12BDCDE Datasheet(HTML) 2 Page - Texas Instruments |
2 / 52 page TMS28F008Axy,TMS28F800Axy 1048576 BY 8BIT/524288 BY 16BIT AUTOSELECT BOOT BLOCK FLASH MEMORIES SMJS851A − NOVEMBER 1997 − REVISED MARCH 1998 2 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 description 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . device symbol nomenclature 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . logic symbol for TMS28F008Axy 40-pin package 6 . . . . . . . . . . . logic symbol for TMS28F800Axy 44-pin package 7 . . . . . . . . . . . logic symbol for TMS28F800Axy 48-pin package 8 . . . . . . . . . . . functional block diagram 9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . architecture 9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . block memory maps 10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . boot-block data protection 12 . . . . . . . . . . . . . . . . . . . . . . . . . . parameter block 12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . main block 12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . data protection 13 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . command-state machine (CSM) 13 . . . . . . . . . . . . . . . . . . . . . operation 13 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . command definition 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . status register 15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . byte-wide or word-wide mode selection 16 . . . . . . . . . . . . . . . command-state machine (CSM) operations 18 . . . . . . . . . . . clear status register 18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . read operations 18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . programming operations 19 . . . . . . . . . . . . . . . . . . . . . . . . . . . . erase operations 19 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . automatic power-saving mode 20 . . . . . . . . . . . . . . . . . . . . . . . reset / deep power-down mode 20 . . . . . . . . . . . . . . . . . . . . . . . absolute maximum ratings 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . recommended operating conditions 27 . . . . . . . . . . . . . . . . . . . . . word/byte typical write and block-erase performance 27 . . . . . . electrical characteristics 28 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . power-up and reset switching characteristics for TMS28F008ASy or ’AEy and TMS28F800ASy or ’AEy 30 . . . . . . . . . . . . . . . . . . . . . . . . . . power-up and reset switching characteristics for TMS28F008AVy or ’ALy and TMS28F800AVy or ’ALy 34 . . . . . . . . . . . . . . . . . . . . . . . . . . . power-up and reset switching characteristics for TMS28F008AZy and TMS28F800AZy 37 . . . . . . . . . . . . . . Parameter Measurement Information 40 . . . . . . . . . . . . . . . . . . . . mechanical data DBJ (R-PDSO-G44) 48 . . . . . . . . . . . . . mechanical data DCD (R-PDSO-G**) 49 . . . . . . . . . . . . . . Table of Contents description The TMS28F800Axy is a 8 388 608-bit, boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F800Axy is organized in a blocked architecture consisting of: D One 16K-byte/8K-word protected boot block D Two 8K-byte/4K-word parameter blocks D One 96K-byte/48K-word main block D Seven 128K-byte/64K-word main blocks The device can be ordered in four different voltage configurations (see Table 1). Operation as a 1024K-byte (8-bit) or a 512K-word (16-bit) organization is user-definable. Embedded program and block-erase functions are fully automated by the on-chip write-state machine (WSM), simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM status can be monitored by an on-chip status register to determine progress of program/erase tasks. The device features user-selectable block erasure. The TMS28F800AEy configuration allows the user to perform memory reads using 2.7−3.6-V VCC and 5-V VCC for optimum power consumption. Erasing or programming the device can be accomplished with VPP = 3 V, 5 V, or 12-V. This configuration is offered in the commercial temperature range (0 °C to 70°C) and the extended temperature range (−40 °C to 85°C). Also, TMS28F800ASy offers VCC = 3 − 3.6 V and VCC = 5 V for optimum power consumption. The TMS28F800ALy configuration allows performance of memory reads using VCC = 3.0 − 3.6 V for optimum power consumption. The TMS28F800AVy configuration allows performance of memory reads using VCC = 2.7−3.6 V for optimum power consumption. The TMS28F800AZy configuration offers a 5-V memory read with a 3-V/5-V/12-V program and erase. This configuration is offered in three temperature ranges: 0 °C to 70°C, − 40°C to 85°C, − 40°C to 125°C. The TMS28F800Axy is offered in a 44-pin plastic small-outline package (PSOP) and a 48-pin thin small-outline package (TSOP) organized as 16-bit or 8-bit. The TMS28F008 is functionally equivalent to the ’F800 except that it is organized only as a 8-bit configuration, and it is offered only in a 40-pin TSOP. |
Similar Part No. - TMS28F800ALB12BDCDE |
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Similar Description - TMS28F800ALB12BDCDE |
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