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TMS28F008ALT12BDCDE Datasheet(PDF) 2 Page - Texas Instruments

Part # TMS28F008ALT12BDCDE
Description  AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TMS28F008ALT12BDCDE Datasheet(HTML) 2 Page - Texas Instruments

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TMS28F008Axy,TMS28F800Axy
1048576 BY 8BIT/524288 BY 16BIT
AUTOSELECT BOOT BLOCK FLASH MEMORIES
SMJS851A − NOVEMBER 1997 − REVISED MARCH 1998
2
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251−1443
description
2
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device symbol nomenclature
5
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logic symbol for TMS28F008Axy 40-pin package
6
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logic symbol for TMS28F800Axy 44-pin package
7
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logic symbol for TMS28F800Axy 48-pin package
8
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functional block diagram
9
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architecture
9
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block memory maps
10
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boot-block data protection
12
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parameter block
12
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main block
12
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data protection
13
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command-state machine (CSM)
13
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operation
13
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command definition
14
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status register
15
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byte-wide or word-wide mode selection
16
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command-state machine (CSM) operations
18
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clear status register
18
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read operations
18
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programming operations
19
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erase operations
19
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automatic power-saving mode
20
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reset / deep power-down mode
20
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absolute maximum ratings
25
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recommended operating conditions
27
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word/byte typical write and block-erase performance
27
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electrical characteristics
28
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power-up and reset switching characteristics for
TMS28F008ASy or ’AEy and
TMS28F800ASy or ’AEy
30
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power-up and reset switching characteristics for
TMS28F008AVy or ’ALy and
TMS28F800AVy or ’ALy
34
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power-up and reset switching characteristics for
TMS28F008AZy and TMS28F800AZy
37
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Parameter Measurement Information
40
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mechanical data
DBJ (R-PDSO-G44)
48
. . . . . . . . . . . . .
mechanical data
DCD (R-PDSO-G**)
49
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Table of Contents
description
The TMS28F800Axy is a 8 388 608-bit, boot-block flash memory that can be electrically block-erased and
reprogrammed. The TMS28F800Axy is organized in a blocked architecture consisting of:
D One 16K-byte/8K-word protected boot block
D Two 8K-byte/4K-word parameter blocks
D One 96K-byte/48K-word main block
D Seven 128K-byte/64K-word main blocks
The device can be ordered in four different voltage configurations (see Table 1). Operation as a 1024K-byte
(8-bit) or a 512K-word (16-bit) organization is user-definable.
Embedded program and block-erase functions are fully automated by the on-chip write-state machine (WSM),
simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM status
can be monitored by an on-chip status register to determine progress of program/erase tasks. The device
features user-selectable block erasure.
The TMS28F800AEy configuration allows the user to perform memory reads using 2.7−3.6-V VCC and 5-V VCC
for optimum power consumption. Erasing or programming the device can be accomplished with VPP = 3 V,
5 V, or 12-V. This configuration is offered in the commercial temperature range (0
°C to 70°C) and the extended
temperature range (−40
°C to 85°C). Also, TMS28F800ASy offers VCC = 3 − 3.6 V and VCC = 5 V for optimum
power consumption. The TMS28F800ALy configuration allows performance of memory reads using
VCC = 3.0 − 3.6 V for optimum power consumption. The TMS28F800AVy configuration allows performance of
memory reads using VCC = 2.7−3.6 V for optimum power consumption.
The TMS28F800AZy configuration offers a 5-V memory read with a 3-V/5-V/12-V program and erase. This
configuration is offered in three temperature ranges: 0
°C to 70°C, − 40°C to 85°C, − 40°C to 125°C.
The TMS28F800Axy is offered in a 44-pin plastic small-outline package (PSOP) and a 48-pin thin small-outline
package (TSOP) organized as 16-bit or 8-bit.
The TMS28F008 is functionally equivalent to the ’F800 except that it is organized only as a 8-bit configuration,
and it is offered only in a 40-pin TSOP.


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