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BQ50002ARHBR Datasheet(PDF) 4 Page - Texas Instruments |
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BQ50002ARHBR Datasheet(HTML) 4 Page - Texas Instruments |
4 / 27 page 4 bq50002A SLUSCP1A – AUGUST 2016 – REVISED AUGUST 2016 www.ti.com Product Folder Links: bq50002A Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Pin Functions PIN I/O DESCRIPTION NAME NO. BOOT1 25 I/O Positive supply rail for the high-side gate driver. Connect a 0.1-µF ceramic capacitor between the BOOT1 and SW1 pins. BOOT2 16 I/O Positive supply rail for the high-side gate driver. Connect a 0.1-µF ceramic capacitor between the BOOT2 and SW2 pins. BP3 4 O LDO output. Tie with 2.2-µF capacitor to GND. For use by bq500511A only. CLK_OUT 9 O Internal oscillator clock out signal. CSN 29 I Current sense amplifier negative input. CSO 31 O Current sense amplifier output. For use by bq500511A only. CSP 30 I Current sense amplifier positive input. Connect current sense resistor as close as possible to this pin. This also serves as the quiet node for power supply input. DMIN1 11 I Modulated signal from coil for DEMOD CHAN1. DMIN2 12 I Modulated signal from coil for DEMOD CHAN2. DMOUT1 8 O Demodulated 2-kHz signal from CHAN1. For use by bq500511A only. DMOUT2 7 O Demodulated 2-kHz signal from CHAN2. For use by bq500511A only. EN 3 I Enable pin with a weak internal pull-down. Float or pull below 1.5 V to disable gate driver, demodulation and current sense. Pull above 2.2 V to enable gate driver. Used by bq500511A to enter and leave standby mode for the transmitter. GND 5 – Signal ground for the ground-referenced logic. All signal level circuits should be referenced to this pin unless otherwise noted. GND 6 – Signal ground for the ground-referenced logic. All signal level circuits should be referenced to this pin unless otherwise noted. GND 13 – Signal ground for the ground-referenced logic. All signal level circuits should be referenced to this pin unless otherwise noted. MODE 10 I MODE pin with a weak internal pull-down. Float, or pull below 1.5 V to enable frequency control of the internally generated PWM signal. Pull above 2.2 V to enable pulse width control of the internally generated PWM signal. Used by bq500511A to select the control method for power control PGND 20 – Power ground for the ground-referenced power stage. Connect to GND. PGND 21 – Power ground for the ground-referenced power stage. Connect to GND. PGND 22 – Power ground for the ground-referenced power stage. Connect to GND. PVIN1 27 I DC input voltage for half-bridge MOSFET. Bypass with 22-µF ceramic capacitor to GND. PVIN1 28 I DC input voltage for half-bridge MOSFET. Bypass with 22-µF ceramic capacitor to GND. PVIN2 14 I DC input voltage for half-bridge MOSFET. Bypass with 22-µF ceramic capacitor to GND. PVIN2 15 I DC input voltage for half-bridge MOSFET. Bypass with 22-µF ceramic capacitor to GND. PWM_CTRL 2 I PWM_CTRL pin with a weak internal pull-down. Controlled by bq500511A (SLUSCN3) for system power delivery control. PWM1/CLK_IN 1 I PWM1/CLK_IN pin with a weak internal pull-down. Controlled by bq500511A (SLUSCN3) for system power delivery control. PWM2/UP_DN 32 I PWM2/UP_DN pin with a weak internal pull-down. Controlled by bq500511A (SLUSCN3) for system power delivery control. SW1 23 O Switch node of the half-bridge MOSFETs. Connect to TX coil. SW1 24 O Switch node of the half-bridge MOSFETs. Connect to TX coil. SW1 26 O Switch node of the half-bridge MOSFETs. Connect to TX coil. SW2 17 O Switch node of the half-bridge MOSFETs. Connect to resonant capacitor. SW2 18 O Switch node of the half-bridge MOSFETs. Connect to resonant capacitor. SW2 19 O Switch node of the half-bridge MOSFETs. Connect to resonant capacitor. |
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