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BQ50002ARHBR Datasheet(PDF) 4 Page - Texas Instruments

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Part # BQ50002ARHBR
Description  Low-Cost 5-V Wireless Power Transmitter Analog Front
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

BQ50002ARHBR Datasheet(HTML) 4 Page - Texas Instruments

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4
bq50002A
SLUSCP1A – AUGUST 2016 – REVISED AUGUST 2016
www.ti.com
Product Folder Links: bq50002A
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
Pin Functions
PIN
I/O
DESCRIPTION
NAME
NO.
BOOT1
25
I/O
Positive supply rail for the high-side gate driver. Connect a 0.1-µF ceramic capacitor
between the BOOT1 and SW1 pins.
BOOT2
16
I/O
Positive supply rail for the high-side gate driver. Connect a 0.1-µF ceramic capacitor
between the BOOT2 and SW2 pins.
BP3
4
O
LDO output. Tie with 2.2-µF capacitor to GND. For use by bq500511A only.
CLK_OUT
9
O
Internal oscillator clock out signal.
CSN
29
I
Current sense amplifier negative input.
CSO
31
O
Current sense amplifier output. For use by bq500511A only.
CSP
30
I
Current sense amplifier positive input. Connect current sense resistor as close as
possible to this pin. This also serves as the quiet node for power supply input.
DMIN1
11
I
Modulated signal from coil for DEMOD CHAN1.
DMIN2
12
I
Modulated signal from coil for DEMOD CHAN2.
DMOUT1
8
O
Demodulated 2-kHz signal from CHAN1. For use by bq500511A only.
DMOUT2
7
O
Demodulated 2-kHz signal from CHAN2. For use by bq500511A only.
EN
3
I
Enable pin with a weak internal pull-down. Float or pull below 1.5 V to disable gate
driver, demodulation and current sense. Pull above 2.2 V to enable gate driver. Used
by bq500511A to enter and leave standby mode for the transmitter.
GND
5
Signal ground for the ground-referenced logic. All signal level circuits should be
referenced to this pin unless otherwise noted.
GND
6
Signal ground for the ground-referenced logic. All signal level circuits should be
referenced to this pin unless otherwise noted.
GND
13
Signal ground for the ground-referenced logic. All signal level circuits should be
referenced to this pin unless otherwise noted.
MODE
10
I
MODE pin with a weak internal pull-down. Float, or pull below 1.5 V to enable
frequency control of the internally generated PWM signal. Pull above 2.2 V to enable
pulse width control of the internally generated PWM signal. Used by bq500511A to
select the control method for power control
PGND
20
Power ground for the ground-referenced power stage. Connect to GND.
PGND
21
Power ground for the ground-referenced power stage. Connect to GND.
PGND
22
Power ground for the ground-referenced power stage. Connect to GND.
PVIN1
27
I
DC input voltage for half-bridge MOSFET. Bypass with 22-µF ceramic capacitor to
GND.
PVIN1
28
I
DC input voltage for half-bridge MOSFET. Bypass with 22-µF ceramic capacitor to
GND.
PVIN2
14
I
DC input voltage for half-bridge MOSFET. Bypass with 22-µF ceramic capacitor to
GND.
PVIN2
15
I
DC input voltage for half-bridge MOSFET. Bypass with 22-µF ceramic capacitor to
GND.
PWM_CTRL
2
I
PWM_CTRL pin with a weak internal pull-down. Controlled by bq500511A (SLUSCN3)
for system power delivery control.
PWM1/CLK_IN
1
I
PWM1/CLK_IN pin with a weak internal pull-down. Controlled by bq500511A
(SLUSCN3) for system power delivery control.
PWM2/UP_DN
32
I
PWM2/UP_DN pin with a weak internal pull-down. Controlled by bq500511A
(SLUSCN3) for system power delivery control.
SW1
23
O
Switch node of the half-bridge MOSFETs. Connect to TX coil.
SW1
24
O
Switch node of the half-bridge MOSFETs. Connect to TX coil.
SW1
26
O
Switch node of the half-bridge MOSFETs. Connect to TX coil.
SW2
17
O
Switch node of the half-bridge MOSFETs. Connect to resonant capacitor.
SW2
18
O
Switch node of the half-bridge MOSFETs. Connect to resonant capacitor.
SW2
19
O
Switch node of the half-bridge MOSFETs. Connect to resonant capacitor.


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