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TLV73318PQDRVRQ1 Datasheet(PDF) 4 Page - Texas Instruments |
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TLV73318PQDRVRQ1 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 27 page 4 TLV733P-Q1 SBVS283A – AUGUST 2016 – REVISED AUGUST 2016 www.ti.com Product Folder Links: TLV733P-Q1 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating junction temperature range (unless otherwise noted); all voltages are with respect to GND (1) MIN MAX UNIT Voltage VIN –0.3 6.0 V VEN –0.3 VIN + 0.3 VOUT –0.3 3.6 Current IOUT Internally limited A Output short-circuit duration Indefinite Temperature Operating junction, TJ –40 150 °C Storage, Tstg –65 160 (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V Charged-device model (CDM), per AEC Q100-011 All pins ±500 Corner pins (1, 3, 4, and 6) ±750 6.3 Recommended Operating Conditions over operating junction temperature range (unless otherwise noted) MIN NOM MAX UNIT VIN Input range 1.4 5.5 V VOUT Output range 1.0 3.3 V IOUT Output current 0 300 mA VEN Enable range 0 VIN V TJ Junction temperature –40 135 °C TA Ambient temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) TLV733P-Q1 UNIT DRV (WSON) 6 PINS RθJA Junction-to-ambient thermal resistance 92.5 °C/W RθJC(top) Junction-to-case (top) thermal resistance 123.9 °C/W RθJB Junction-to-board thermal resistance 61.9 °C/W ψJT Junction-to-top characterization parameter 9.7 °C/W ψJB Junction-to-board characterization parameter 62.3 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 30.9 °C/W |
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