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TPIC6A259NE Datasheet(PDF) 5 Page - Texas Instruments |
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TPIC6A259NE Datasheet(HTML) 5 Page - Texas Instruments |
5 / 13 page TPIC6A259 POWER LOGIC 8BIT ADDRESSABLE LATCH SLIS004B − APRIL 1993 − REVISED SEPTEMBER 1995 5 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 recommended operating conditions MIN MAX UNIT Logic supply voltage, VCC 4.5 5.5 V High-level input voltage, VIH 0.85 VCC VCC V Low-level input voltage, VIL 0 0.15 VCC V Pulsed drain output current, TC = 25°C, VCC = 5 V (see Notes 3 and 5) − 1.8 0.6 A Setup time, D high before G ↑,tsu (see Figure 2) 10 ns Hold time, D high before G ↑, th (see Figure 2) 5 ns Pulse duration, tw (see Figure 2) 15 ns Operating case temperature, TC −40 125 °C electrical characteristics, VCC = 5 V, TC = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)DSX Drain-to-source breakdown voltage ID = 1 mA 50 V VSD Source-to-drain diode forward voltage IF = 350 mA, See Note 3 0.8 1.1 V IIH High-level input current VI = VCC 1 µA IIL Low-level input current VI = 0 −1 µA ICC Logic supply current IO = 0, VI = VCC or 0 0.5 5 mA IOK Output current at which chopping starts TC = 25°C, See Note 5 and Figures 3 and 4 0.6 0.8 1.1 A I(nom) Nominal current VDS(on) = 0.5 V, I(nom) = ID,TC = 85°C, VCC = 5 V, See Notes 5, 6, and 7 350 mA ID Off-state drain current VDS = 40 V, TC = 25°C 0.1 1 A ID Off-state drain current VDS = 40 V, TC = 125°C 0.2 5 µA rDS(on) Static drain-to-source on-state ID = 350 mA, TC = 25°C See Notes 5 and 6 1 1.5 Ω rDS(on) Static drain-to-source on-state resistance ID = 350 mA, TC = 125°C See Notes 5 and 6 and Figures 9 and 10 1.7 2.5 Ω switching characteristics, VCC = 5 V, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tPHL Propagation delay time, high- to low-level output from D 30 ns tPLH Propagation delay time, low- to high-level output from D CL = 30 pF, ID = 350 mA, 125 ns tr Rise time, drain output CL = 30 pF, ID = 350 mA, See Figures 1, 2, and 11 60 ns tf Fall time, drain output See Figures 1, 2, and 11 30 ns ta Reverse-recovery-current rise time IF = 350 mA, di/dt = 20 A/ µs, 100 ns trr Reverse-recovery time IF = 350 mA, di/dt = 20 A/ µs, See Notes 5 and 6 and Figure 5 300 ns NOTES: 3. Pulse duration ≤ 100 µs and duty cycle ≤ 2%. 5. Technique should limit TJ − TC to 10°C maximum. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. 7. Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a voltage drop of 0.5 V at TC = 85°C. thermal resistance PARAMETER TEST CONDITIONS MIN MAX UNIT R JC Thermal resistance, junction-to-case DW All eight outputs with equal power 10 °C/W RθJC Thermal resistance, junction-to-case NE All eight outputs with equal power 10 °C/W R JA Thermal resistance, junction-to-ambient DW All eight outputs with equal power 50 °C/W RθJA Thermal resistance, junction-to-ambient NE All eight outputs with equal power 50 °C/W |
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