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TPIC6A259NE Datasheet(PDF) 5 Page - Texas Instruments

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Part # TPIC6A259NE
Description  POWER LOGIC 8-BIT ADDRESSABLE LATCH
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TPIC6A259NE Datasheet(HTML) 5 Page - Texas Instruments

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TPIC6A259
POWER LOGIC 8BIT ADDRESSABLE LATCH
SLIS004B − APRIL 1993 − REVISED SEPTEMBER 1995
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251−1443
recommended operating conditions
MIN
MAX
UNIT
Logic supply voltage, VCC
4.5
5.5
V
High-level input voltage, VIH
0.85 VCC
VCC
V
Low-level input voltage, VIL
0
0.15 VCC
V
Pulsed drain output current, TC = 25°C, VCC = 5 V (see Notes 3 and 5)
− 1.8
0.6
A
Setup time, D high before G
↑,tsu (see Figure 2)
10
ns
Hold time, D high before G
↑, th (see Figure 2)
5
ns
Pulse duration, tw (see Figure 2)
15
ns
Operating case temperature, TC
−40
125
°C
electrical characteristics, VCC = 5 V, TC = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSX
Drain-to-source breakdown voltage
ID = 1 mA
50
V
VSD
Source-to-drain diode forward
voltage
IF = 350 mA,
See Note 3
0.8
1.1
V
IIH
High-level input current
VI = VCC
1
µA
IIL
Low-level input current
VI = 0
−1
µA
ICC
Logic supply current
IO = 0,
VI = VCC or 0
0.5
5
mA
IOK
Output current at which chopping
starts
TC = 25°C,
See Note 5 and Figures 3 and 4
0.6
0.8
1.1
A
I(nom)
Nominal current
VDS(on) = 0.5 V, I(nom) = ID,TC = 85°C,
VCC = 5 V,
See Notes 5, 6, and 7
350
mA
ID
Off-state drain current
VDS = 40 V,
TC = 25°C
0.1
1
A
ID
Off-state drain current
VDS = 40 V,
TC = 125°C
0.2
5
µA
rDS(on)
Static drain-to-source on-state
ID = 350 mA,
TC = 25°C
See Notes 5 and 6
1
1.5
rDS(on)
Static drain-to-source on-state
resistance
ID = 350 mA,
TC = 125°C
See Notes 5 and 6
and Figures 9 and 10
1.7
2.5
switching characteristics, VCC = 5 V, TC = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tPHL Propagation delay time, high- to low-level output from D
30
ns
tPLH Propagation delay time, low- to high-level output from D
CL = 30 pF,
ID = 350 mA,
125
ns
tr
Rise time, drain output
CL = 30 pF,
ID = 350 mA,
See Figures 1, 2, and 11
60
ns
tf
Fall time, drain output
See Figures 1, 2, and 11
30
ns
ta
Reverse-recovery-current rise time
IF = 350 mA,
di/dt = 20 A/
µs,
100
ns
trr
Reverse-recovery time
IF = 350 mA,
di/dt = 20 A/
µs,
See Notes 5 and 6 and Figure 5
300
ns
NOTES:
3. Pulse duration
≤ 100 µs and duty cycle ≤ 2%.
5. Technique should limit TJ − TC to 10°C maximum.
6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
7. Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a
voltage drop of 0.5 V at TC = 85°C.
thermal resistance
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
R JC
Thermal resistance, junction-to-case
DW
All eight outputs with equal power
10
°C/W
RθJC
Thermal resistance, junction-to-case
NE
All eight outputs with equal power
10
°C/W
R JA
Thermal resistance, junction-to-ambient
DW
All eight outputs with equal power
50
°C/W
RθJA
Thermal resistance, junction-to-ambient
NE
All eight outputs with equal power
50
°C/W


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