SI1900DL datasheet(3/4 Pages) VISHAY

Part #	SI1900DL

Description	Dual N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si1900DL

Vishay Siliconix

Document Number: 71251

S-21374—Rev. C, 12-Aug-02

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

10

20

30

40

50

60

0

4

8

12

16

20

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50

-25

0

25

50

75

100

125

150

0

2

4

6

8

10

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.4

0.8

1.2

1.6

0.0

0.2

0.4

0.6

0.8

1.0

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 15 V

ID = 0.59 A

ID - Drain Current (A)

VGS = 10 V

ID = 0.59 A

VGS = 4.5 V

Gate Charge

On-Resistance vs. Drain Current

Qg - Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ - Junction Temperature (_C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.0

0.3

0.6

0.9

1.2

1.5

1.8

02468

10

TJ = 150_C

TJ = 25_C

ID = 0.59 A

1

0.1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

VGS = 10 V

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