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TPIC6595DWR Datasheet(PDF) 4 Page - Texas Instruments |
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TPIC6595DWR Datasheet(HTML) 4 Page - Texas Instruments |
4 / 18 page TPIC6595 POWER LOGIC 8BIT SHIFT REGISTER SLIS010B − APRIL 1992 − REVISED MAY 2005 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 recommended operating conditions over recommended operating temperature range (unless otherwise noted) MIN MAX UNIT Logic supply voltage, VCC 4.5 5.5 V High-level input voltage, VIH 0.85 VCC V Low-level input voltage, VIL 0.15 VCC V Pulsed drain output current, TC = 25°C, VCC = 5 V (see Notes 3 and 5) − 1.8 1.5 A Setup time, SER IN high before SRCK ↑, tsu (see Figure 2) 10 ns Hold time, SER IN high after SRCK ↑, th (see Figure 2) 10 ns Pulse duration, tw (see Figure 2) 20 ns Operating case temperature, TC −40 125 °C electrical characteristics, VCC = 5 V, TC = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)DSX Drain-source breakdown voltage ID = 1 mA 45 V VSD Source-drain diode forward voltage IF = 250 mA, See Note 3 0.85 1 V VOH High-level output voltage, IOH = − 20 mA, VCC = 4.5 V 4.4 4.49 V VOH High-level output voltage, SER OUT IOH = − 4 mA, VCC = 4.5 V 4.1 4.3 V VOL Low-level output voltage, SER IOH = 20 mA, VCC = 4.5 V 0.002 0.1 V VOL Low-level output voltage, SER OUT IOH = 4 mA, VCC = 4.5 V 0.2 0.4 V V(hys) Input hysteresis VDS = 15 V 1.3 V IIH High-level input current VCC = 5.5 V, VI = VCC 1 µA IIL Low-level input current VCC = 5.5 V, VI = 0 −1 µA ICCL Logic supply current IO = 0, All inputs low 15 100 µA ICC(FRQ) Logic supply current frequency fSRCK = 5 MHz, IO = 0, CL = 30 pF, See Figures 1, 2, and 6 0.6 5 mA IN Nominal current VDS(on) = 0.5 V, IN = ID,TC = 85°C See Notes 5, 6, and 7 250 mA IDSX Off-state drain current VDS = 40 V 0.05 1 A IDSX Off-state drain current VDS = 40 V, TC = 125°C 0.15 5 µA ID = 250 mA, VCC = 4.5 V 1.3 2 rDS(on) Static drain-source on-state resistance ID = 250 mA, TC = 125°C, VCC = 4.5 V See Notes 5 and 6 and Figures 9 and 10 2 3.2 Ω resistance ID = 500 mA, VCC = 4.5 V and Figures 9 and 10 1.3 2 switching characteristics, VCC = 5 V, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tPLH Propagation delay time, low-to-high-level output from G 650 ns tPHL Propagation delay time, high-to-low-level output from G CL = 30 pF, ID = 250 mA, 150 ns tr Rise time, drain output CL = 30 pF, ID = 250 mA, See Figures 1 and 2 750 ns tf Fall time, drain output See Figures 1 and 2 425 ns ta Reverse-recovery-current rise time IF = 250 mA, di/dt = 20 A/ µs, 100 ns trr Reverse-recovery time IF = 250 mA, di/dt = 20 A/ µs, See Notes 5 and 6 and Figure 3 300 ns NOTES: 3. Pulse duration ≤ 100 µs, duty cycle ≤ 2% 5. Technique should limit TJ − TC to 10°C maximum. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. 7. Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a voltage drop of 0.5 V at TC = 85°C. |
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