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OPA111SM Datasheet(PDF) 1 Page - Texas Instruments |
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OPA111SM Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 14 page  Low Noise Precision Difet ® OPERATIONAL AMPLIFIER FEATURES q LOW NOISE: 100% Tested, 8nV √Hz max (10kHz) q LOW BIAS CURRENT: 1pA max q LOW OFFSET: 250 µV max q LOW DRIFT: 1 µV/°C max q HIGH OPEN-LOOP GAIN: 120dB min q HIGH COMMON-MODE REJECTION: 100dB min APPLICATIONS q PRECISION INSTRUMENTATION q DATA ACQUISITION q TEST EQUIPMENT q OPTOELECTRONICS q MEDICAL EQUIPMENT—CAT SCANNER q RADIATION HARD EQUIPMENT International Airport Industrial Park • Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: (520) 746-1111 • Twx: 910-952-1111 • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132 BIFET® National Semiconductor Corp., Difet® Burr-Brown Corp. OPA111 ® 8 2 3 1 5 7 6 4 Case and Substrate Output Trim +V CC Noise-Free Cascode* Trim +In –In –V CC 10k Ω 10k Ω *Patented 2k Ω 2k Ω 2k Ω 2k Ω DESCRIPTION The OPA111 is a precision monolithic dielectrically isolated FET (Difet ®) operational amplifier. Outstand- ing performance characteristics allow its use in the most critical instrumentation applications. Noise, bias current, voltage offset, drift, open-loop gain, common-mode rejection, and power supply re- jection are superior to BIFET® amplifiers. Very low bias current is obtained by dielectric isola- tion with on-chip guarding. Laser trimming of thin-film resistors gives very low offset and drift. Extremely low noise is achieved with patented circuit design techniques. A new cascode design allows high precision input specifications and reduced susceptibility to flicker noise. Standard 741 pin configuration allows upgrading of existing designs to higher performance levels. © 1984 Burr-Brown Corporation PDS-526K Printed in U.S.A. August, 1995 SBOS138 |
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