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OPA2316SIDGS Datasheet(PDF) 5 Page - Texas Instruments

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Part # OPA2316SIDGS
Description  10-MHz, Low-Power, Low-Noise, RRIO, 1.8-V CMOS Operational Amplifier
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

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OPA316, OPA2316, OPA2316S, OPA4316
www.ti.com
SBOS703E – APRIL 2014 – REVISED JUNE 2016
Product Folder Links: OPA316 OPA2316 OPA2316S OPA4316
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Copyright © 2014–2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
Input pins are diode-clamped to the power-supply rails. Current limit input signals that can swing more than 0.5 V beyond the supply
rails to 10 mA or less.
(3)
Short-circuit to ground, one amplifier per package.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature (unless otherwise noted)
(1)
MIN
MAX
UNIT
Supply voltage
7
V
Signal input pins
Voltage(2)
Common-mode
(V–) – 0.5
(V+) + 0.5
V
Differential
(V+) – (V–) + 0.2
V
Current(2)
–10
10
mA
Output short-circuit(3)
Continuous
TA
Operating temperature
–55
150
°C
TJ
Junction temperature
150
°C
Tstg
Storage temperature
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
over operating free-air temperature range (unless otherwise noted)
VALUE
UNIT
V(ESD)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±4000
V
Charged device model (CDM), per JEDEC specification JESD22-C101(2)
±1500
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VS
Supply voltage
1.8
5.5
V
Specified temperature
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(2)
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3)
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4)
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5)
The junction-to-top characterization parameter,
ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining RθJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6)
The junction-to-board characterization parameter,
ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining RθJA, using a procedure described in JESD51-2a (sections 6 and 7).
6.4 Thermal Information: OPA316
THERMAL METRIC(1)
OPA316
UNIT
SOT23 (DBV)
SC70 (DCK)
5 PINS
5 PINS
RθJA
Junction-to-ambient thermal resistance(2)
221.7
263.3
°C/W
RθJC(top)
Junction-to-case(top) thermal resistance(3)
144.7
75.5
°C/W
RθJB
Junction-to-board thermal resistance(4)
49.7
51
°C/W
ψJT
Junction-to-top characterization parameter(5)
26.1
1
°C/W
ψJB
Junction-to-board characterization parameter(6)
49
50.3
°C/W


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