TPS2400DBVTG4 datasheet(5/24 Pages) TI1

Part #	TPS2400DBVTG4

Description	Overvoltage Protection Controller

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TPS2400

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SLUS599B – JUNE 2004 – REVISED OCTOBER 2015

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

VI(VIN) = 3.1 V

65

110

VI(VIN) = 5 V

95

180

II(VIN)

Input supply current, VIN

µA

VI(VIN) = 6.5 V

135

220

VI(VIN) = 100 V

550

1000

Undervoltage lockout upper

UVLO(upper)

VI(VIN) rising

2.9

3

3.1

V

threshold

UVLO(hyst)

Undervoltage lockout hysteresis

85

100

115

mV

Overvoltage protection upper

OVP(upper)

VI(VIN) rising

6.7

6.9

7.1

V

threshold

OVP(hyst)

Overvoltage protection hysteresis

135

150

165

mV

GATE DRIVE

VI(VIN) = 3.1 V, VO(gate) = 7 V

3

10

IOSOURCE(gate) Gate sourcing current

µA

VI(VIN) = 5 V, VO(gate) = 10 V

3

10

IOSINK(gate)

Gate sinking current(1)

VI(VIN) = 7.2 V, VO(gate) = 15 V

350

485

600

mA

VI(VIN) = 3.1 V, IOSOURCE(gate) = 1 µA

10

12

VOH(gate)

Gate output high voltage

VI(VIN) = 5 V, IOSOURCE(gate) = 1.5 µA

16

19

V

VI(VIN) = 6.5 V, IOSOURCE(gate) = 1.5 µA

16

20

VOHMAX(gate)

Gate output high maximum voltage

IOSOURCE(gate) = 0 µA

20

V

VOL(gate)

Gate output low voltage

VI(VIN) = 7.2 V, IOSINK(gate) = 50 mA

1

V

Gate turnon propogation delay,

VI(VIN) stepped from 0 V to 5 V, CLOAD = 1 nF

0.1

0.6

TON(prop)

(50% VI(vin) to VO(gate) = 1 V,

ms

CLOAD = 10 nF

0.9

3

RLOAD = 10 MΩ

Gate turnon rise time,

VI(VIN) stepped from 0 V to 5 V, CLOAD = 1 nF

1.5

6

TON(rise)

(VO(gate) = 1 V to 90%VO(gate),

ms

CLOAD = 10 nF

15

55

RLOAD = 10 MΩ)

VI(VIN) stepped from 6 V to 8 V, CLOAD = 1 nF

5

0.25

Turnoff time, (50% VI(VIN) step to

TOFF

µs

VO(GATE) = 6.9 V, RLOAD = 10 MΩ)

CLOAD = 10 nF

5

0.5

(1)

Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account

separately.

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