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TPS3779-Q1, TPS3780-Q1

SBVS273 – JUNE 2016

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Product Folder Links: TPS3779-Q1 TPS3780-Q1

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Copyright © 2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

For low-power devices, the junction temperature rise above the ambient temperature is negligible; therefore, the junction temperature is

7 Specifications

7.1 Absolute Maximum Ratings

over operating junction temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Voltage

VDD

–0.3

7

V

OUT1, OUT2 (TPS3779-Q1 only)

–0.3

VDD + 0.3

OUT1, OUT2 (TPS3780-Q1 only)

–0.3

7

SENSE1, SENSE2

–0.3

7

Current

OUT1, OUT2

±20

mA

Temperature

(2)

–40

125

°C

–65

150

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±2000

V

Charged-device model (CDM), per AEC Q100-011

±500

7.3 Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Power-supply voltage

1.5

5.5

V

Sense voltage

SENSE1, SENSE2

0

5.5

V

Output voltage (TPS3779-Q1 only)

OUT1, OUT2

0

VDD + 0.3

V

Output voltage (TPS3780-Q1 only)

OUT1, OUT2

0

5.5

V

Pullup resistor (TPS3780-Q1 only)

1.5

10,000

k

Ω

Current

OUT1, OUT2

–5

5

mA

Input capacitor

0.1

µF

Junction temperature

–40

25

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

TPS3779-Q1,

TPS3780-Q1

UNIT

DBV (SOT-23)

6 PINS

Junction-to-ambient thermal resistance

193.9

°C/W

Junction-to-case (top) thermal resistance

134.5

°C/W

Junction-to-board thermal resistance

39.0

°C/W

Junction-to-top characterization parameter

30.4

°C/W

Junction-to-board characterization parameter

38.5

°C/W

Junction-to-case (bottom) thermal resistance

N/A

°C/W