Electronic Components Datasheet Search |
|
TPS43330AQDAPRQ1 Datasheet(PDF) 6 Page - Texas Instruments |
|
|
TPS43330AQDAPRQ1 Datasheet(HTML) 6 Page - Texas Instruments |
6 / 48 page 6 TPS43330A-Q1 SLVSC16B – AUGUST 2013 – REVISED JULY 2016 www.ti.com Product Folder Links: TPS43330A-Q1 Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to AGND, unless otherwise specified. 6 Specifications 6.1 Absolute Maximum Ratings (1) MIN MAX UNIT Voltage Input voltage: VIN, VBAT –0.3 60 V Voltage (buck function: BuckA and BuckB) Ground: PGNDA–AGND, PGNDB–AGND –0.3 0.3 V Enable inputs: ENA, ENB –0.3 60 Bootstrap inputs: CBA, CBB –0.3 68 Bootstrap inputs: CBA–PHA, CBB–PHB –0.3 8.8 Phase inputs: PHA, PHB –0.7 60 Phase inputs: PHA, PHB (for 150 ns) –1 60 Feedback inputs: FBA, FBB –0.3 13 Error-amplifier outputs: COMPA, COMPB –0.3 13 High-side MOSFET drivers: GA1-PHA, GB1-PHB –0.3 8.8 Low-side MOSFET drivers: GA2–PGNDA, GB2–PGNDB –0.3 8.8 Current-sense voltage: SA1, SA2, SB1, SB2 –0.3 13 Soft start: SSA, SSB –0.3 13 Power-good outputs: PGA, PGB –0.3 13 Power-good delay: DLYAB –0.3 13 Switching-frequency timing resistor: RT –0.3 13 SYNC, EXTSUP –0.3 13 Voltage (boost function) Low-side MOSFET driver: GC1–PGNDA –0.3 8.8 V Error-amplifier output: COMPC –0.3 13 Enable input: ENC –0.3 13 Current-limit sense: DS –0.3 60 Output-voltage select: DIV –0.3 8.8 Voltage (PMOS driver) P-channel MOSFET driver: GC2 –0.3 60 V P-channel MOSFET driver: VIN-GC2 –0.3 8.8 Voltage (Gate-driver supply) Gate-driver supply: VREG –0.3 8.8 V Temperature Junction temperature: TJ –40 150 °C Operating temperature: TA –40 125 Storage temperature: Tstg –55 165 (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V Charged-device model (CDM), per AEC Q100-011 All pins except 1, 19, 20, and 38 ±500 Pins 1, 19, 20, and 38 ±750 Machine model All pins except 15 and 24 ±200 Pins 15 and 24 ±150 |
Similar Part No. - TPS43330AQDAPRQ1 |
|
Similar Description - TPS43330AQDAPRQ1 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |