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BUL742 Datasheet(PDF) 2 Page - STMicroelectronics |
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BUL742 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 5 page THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient Max 1.78 62.5 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = 900 V 100 µA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 100 mA L = 25 mH 400 V BVEBO Emitter-Base Breakdown Voltage (IC = 0) IE = 1 mA 12 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 1 A IB = 0.2 A IC = 2 A IB = 0.4 A IC = 4 A IB = 0.8 A 0.5 1.0 1.5 V V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 2 A IB = 0.4 A 1.5 V hFE ∗ DC Current Gain IC = 250 mA VCE = 5 V IC = 2 A VCE = 5 V 35 10 70 35 ts tf RESISTIVE LOAD Storage Time Fall Time VCC = 125 V IC = 0.5 A IB1 = 45 mA IB2 = -45 mA tp = 300 µs 11 250 µs ns Esb Avalanche Energy L = 2 mH 6 mJ ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Energy Rating Test Circuit BUL742 2/5 |
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