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TPS54202HDDCR Datasheet(PDF) 4 Page - Texas Instruments |
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TPS54202HDDCR Datasheet(HTML) 4 Page - Texas Instruments |
4 / 28 page 4 TPS54202H SLVSDG7 – APRIL 2016 www.ti.com Product Folder Links: TPS54202H Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Input voltage range, VI VIN –0.3 30 V EN –0.3 7 V FB –0.3 7 V Output voltage range, VO BOOT-SW –0.3 7 V SW –0.3 30 V SW (20 ns transient) –5 30 V Operating junction temperature, TJ –40 150 °C Storage temperature range, Tstg –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VI Input voltage range VIN 4.5 28 V EN –0.1 7 V FB –0.1 7 V VO Output voltage range BOOT-SW –0.1 7 V SW –0.1 28 V TJ Operating junction temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) TPS54202H UNIT DDC ( SOT23) 6 PINS RθJA Junction-to-ambient thermal resistance 89.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 39.5 °C/W RθJB Junction-to-board thermal resistance 14.7 °C/W ψJT Junction-to-top characterization parameter 1.2 °C/W ψJB Junction-to-board characterization parameter 14.7 °C/W |
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