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OPA832IDBVT Datasheet(PDF) 4 Page - Texas Instruments |
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OPA832IDBVT Datasheet(HTML) 4 Page - Texas Instruments |
4 / 30 page OPA832 SBOS266E − JUNE 2003 − REVISED AUGUST 2008 www.ti.com 4 ELECTRICAL CHARACTERISTICS: VS = +5V Boldface limits are tested at +25 °C. At TA = 25°C, G = +2, and RL = 150Ω to VCM = 2V, unless otherwise noted (see Figure 1). OPA832ID, IDBV TYP MIN/MAX OVER TEMPERATURE PARAMETER CONDITIONS +25 °C +25 °C(1) 0 °C to 70 °C(2) −40 °C to +85 °C(2) UNITS MIN/ MAX TEST LEVEL(3) AC PERFORMANCE (see Figure 1) Small-Signal Bandwidth G = +2, VO ≤ 0.5VPP 92 56 55 55 MHz min B G = −1, VO ≤ 0.5VPP 103 60 58 58 MHz min B Peaking at a Gain of +1 VO ≤ 0.5VPP 4.2 dB typ C Slew Rate G = +2, 2V Step 348 230 223 223 V/ µs min B Rise Time 0.5V Step 4.3 ns max B Fall Time 0.5V Step 4.6 ns max B Settling Time to 0.1% G = +2, 1V Step 4.6 ns max B Harmonic Distortion VO = 2VPP, 5MHz 2nd-Harmonic RL = 150Ω −59 −56 −56 −55 dBc max B RL = 500Ω −62 −59 −59 −59 dBc max B 3rd-Harmonic RL = 150Ω −56 −50 −49 −47 dBc max B RL = 500Ω −72 −65 −62 −58 dBc max B Input Voltage Noise f > 1MHz 9.3 nV/ √Hz max B Input Current Noise f > 1MHz 2.3 pA/ √Hz max B NTSC Differential Gain RL = 150Ω 0.11 % typ C NTSC Differential Phase RL = 150Ω 0.14 ° typ C DC PERFORMANCE(4) Gain Error G = +2 ±0.3 ±1.5 ±1.6 ±1.7 % min A G = −1 ±0.2 ±1.5 ±1.6 ±1.7 % max B Internal RF and RG, Maximum 400 455 460 462 Ω max A Minimum 400 345 340 338 Ω max A Average Drift 0.1 0.1 %/ °C max B Input Offset Voltage ±0.5 ±5 ±6 ±6.5 mV max A Average Offset Voltage Drift — ±20 ±20 µV/°C max B Input Bias Current VCM = 2.0V 5.5 +10 +12 +13 µA max A Input Bias Current Drift ±12 ±12 nA/ °C max B Input Offset Current VCM = 2.0V ±0.1 ±1.5 ±2 ±2.5 µA max A Input Offset Current Drift — ±10 ±10 nA/ °C max B INPUT Least Positive Input Voltage −0.5 −0.2 0 +0.1 V max B Most Positive Input Voltage 3.3 3.2 3.1 3.0 V min B Input Impedance Differential-Mode 10 2.1 k Ω pF typ C Common-Mode 400 1.2 k Ω pF typ C OUTPUT Least Positive Output Voltage RL = 1kΩ to 2.0V 0.03 0.16 0.18 0.20 V max A RL = 150Ω to 2.0V 0.18 0.3 0.35 0.40 V max A Most Positive Output Voltage RL = 1kΩ to 2.0V 4.94 4.8 4.6 4.4 V min A RL = 150Ω to 2.0V 4.86 4.6 4.5 4.4 V min A Current Output, Sourcing 80 60 55 52 mA min A Current Output, Sinking 80 60 55 52 mA min A Short-Circuit Output Current Output Shorted to Either Supply 100 mA typ C Closed-Loop Output Impedance G = +2, f ≤ 100kHz 0.2 Ω typ C POWER SUPPLY Minimum Operating Voltage +2.8 V typ C Maximum Operating Voltage — +11 +11 +11 V max A Maximum Quiescent Current VS = +5V 3.9 4.1 4.8 5.5 mA max A Minimum Quiescent Current VS = +5V 3.9 3.7 3.5 3.2 mA min A Power-Supply Rejection Ratio (PSRR) Input-Referred 66 61 60 59 dB min A THERMAL CHARACTERISTICS Specification: ID, IDBV −40 to +85 °C typ C Thermal Resistance D SO-8 125 °C/W typ C DBV SOT23-5 150 °C/W typ C (1) Junction temperature = ambient for +25 °C specifications. (2) Junction temperature = ambient at low temperature limits; junction temperature = ambient +5 °C at high temperature limit for over temperature. (3) Test levels: (A) 100% tested at +25 °C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out of node. |
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