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TPS54260QDGQRQ1 Datasheet(PDF) 5 Page - Texas Instruments

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Part # TPS54260QDGQRQ1
Description  TPS54260-Q1 3.5-V to 60-V Step-Down Converter With Eco-mode
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TPS54260QDGQRQ1 Datasheet(HTML) 5 Page - Texas Instruments

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TPS54260-Q1
www.ti.com
SLVSAH8F – DECEMBER 2010 – REVISED AUGUST 2015
6.4 Thermal Information
TPS54260-Q1
THERMAL METRIC(1)(2)
DRC (VSON)
DGQ (HVSSOP)
UNIT
10 PINS
10 PINS
Standard board
40
62.5
RθJA
Junction-to-ambient thermal resistance
°C/W
Custom board(3)
57
RθJC(top)
Junction-to-case (top) thermal resistance
65
83
°C/W
RθJB
Junction-to-board thermal resistance
8
28
°C/W
ψJT
Junction-to-top characterization parameter
0.6
1.7
°C/W
ψJB
Junction-to-board characterization parameter
7.5
20.1
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
7.8
21
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(2)
Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where
distortion starts to substantially increase. See power dissipation estimate in application section of this data sheet for more information.
(3)
Test boards conditions:
(a) 3 inches × 3 inches, 2 layers, thickness: 0.062 inch
(b) 2-oz copper traces located on the top of the PCB
(c) 2-oz copper ground plane, bottom layer
(d) 6 thermal vias (13 mil) located under the device package
6.5 Electrical Characteristics
TJ = –40 to 150°C, VIN = 3.5 to 60 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY VOLTAGE (VIN PIN)
Operating input voltage
3.5
60
V
Internal undervoltage lockout
No voltage hysteresis, rising and falling
2.5
V
threshold
Shutdown supply current
EN = 0 V, 25°C, 3.5 V
≤ VIN ≤ 60 V
1.3
4
μA
Operating: nonswitching supply
VSENSE = 0.83 V, VIN = 12 V, 25°C
138
200
current
ENABLE AND UVLO (EN PIN)
Enable threshold voltage
No voltage hysteresis, rising and falling, 25°C
1.15
1.25
1.36
V
Enable threshold +50 mV
–3.8
Input current
μA
Enable threshold –50 mV
–0.9
Hysteresis current
–2.9
μA
VOLTAGE REFERENCE
TJ = 25°C
0.792
0.8
0.808
Voltage reference
V
0.784
0.8
0.816
HIGH-SIDE MOSFET
VIN = 3.5 V, BOOT-PH = 3 V
300
On-resistance
m
VIN = 12 V, BOOT-PH = 6 V
200
410
ERROR AMPLIFIER
Input current
50
nA
Error amplifier transconductance (gM) –2 μA < ICOMP < 2 μA, VCOMP = 1 V
310
μS
–2
μA < ICOMP < 2 μA, VCOMP = 1 V,
Error amplifier transconductance (gM)
70
μS
during slow start
VVSENSE = 0.4 V
Error amplifier dc gain
VVSENSE = 0.8 V
10,000
V/V
Error amplifier bandwidth
2700
kHz
Error amplifier source/sink
V(COMP) = 1 V, 100 mV overdrive
±27
μA
COMP to switch current
10.5
A/V
transconductance
Copyright © 2010–2015, Texas Instruments Incorporated
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