1

0.1

0.2

0.4

20

210

100

40

20

100

16

14

12

10

6

4

2

1

4

f=1MHz

0.6

Pulse Width=300

0.01

0.02

0.06

0.1

0.2

0.4

2

1.0

4

100

10

0.8

1.0

1.2

1.4

2.0

1.6

1.8

0

1

100

30

10

20

10

40

50

8.3ms Single Half

Sine-Wave

020

40

60

160

80

100

120

140

200

180

Single Phase

Resistive or

Inductive Load

1.0

0.8

0.6

0.4

0.2

1.2

0

-1.0A

-0.25A

0

+0.5A

1cm

PULSE

GENERATOR

(NOTE2)

D.U.T.

1

N.1.

50

N.1.

OSCILLOSCOPE

(NOTE 1)

(+)

50VDC

(APPROX)

(-)

10

N.1.

(- )

(+ )

SG10A---SG10M

SETTIMEBASEFOR50/100 ns /cm

AMBIENTTEMPERATURE,

NUMBER OF CYCLES AT60 Hz

NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF

FIG.1 -- REVERSE RECOVERYTIMECHARACTERISTIC AND TEST CIRCUIT DIAGRAM

FIG.2 --FORWARD DERATING CURVE

INSTANTANEOUS FORWARD VOLTAGE,VOLTS

REVERSE VOLTAGE,VOLTS

FIG.5-- TYPICAL JUNCTION CAPACITANCE

2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O

FIG.3 --PEAK FORWARD SURGECURRENT

FIG.4--TYPICAL FORWARD CHARACTERISTIC

www.diode.kr

Diode Semiconductor Korea