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TLC272CPWG4 Datasheet(PDF) 2 Page - Texas Instruments |
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TLC272CPWG4 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 53 page TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 description (continued) AVAILABLE OPTIONS PACKAGED DEVICES CHIP TA VIOmax AT 25 °C SMALL OUTLINE (D) CHIP CARRIER (FK) CERAMIC DIP (JG) PLASTIC DIP (P) TSSOP (PW) CHIP FORM (Y) 500 µV TLC277CD — — TLC277CP — — 0 °Cto70°c 500 µV 2 mV TLC277CD TLC272BCD — — — — TLC277CP TLC272BCP — — — — 0 °C to 70°c 2 mV 5 mV TLC272BCD TLC272ACD — — TLC272BCP TLC272ACP — — 5 mV 10mV TLC272ACD TLC272CD — — TLC272ACP TLC272CP TLC272CPW TLC272Y 500 µV TLC277ID — — TLC277IP — — 40 °Cto85°C 500 µV 2 mV TLC277ID TLC272BID — — — — TLC277IP TLC272BIP — — — — – 40 °C to 85°C 2 mV 5 mV TLC272BID TLC272AID — — TLC272BIP TLC272AIP — — 5 mV 10 mV TLC272AID TLC272ID — — TLC272AIP TLC272IP — — The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC277CDR). In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail. A wide range of packaging options is available, including small-outline and chip carrier versions for high-density system applications. The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up. The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance. The C-suffix devices are characterized for operation from 0 °C to 70°C. The I-suffix devices are characterized for operation from – 40 °C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of – 55 °C to 125°C. |
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