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TPS54880PWPG4 Datasheet(PDF) 4 Page - Texas Instruments |
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TPS54880PWPG4 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 23 page TPS54880 SLVS450A − OCTOBER 2002 REVISED APRIL 2005 www.ti.com 4 ELECTRICAL CHARACTERISTICS (continued) over operating free-air temperature range unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ERROR AMPLIFIER Error amplifier open loop voltage gain 1 kΩ COMP to AGND(1) 90 110 dB Error amplifier unity gain bandwidth Parallel 10 kΩ, 160 pF COMP to AGND(1) 3 5 MHz Error amplifier common mode input voltage range Powered by internal LDO(1) 0 VBIAS V Input bias current, VSENSE VSENSE = Vref 60 250 nA Output voltage slew rate (symmetric), COMP 1.0 1.4 V/µs PWM COMPARATOR PWM comparator propagation delay time, PWM comparator input to PH pin (excluding deadtime) 10-mV overdrive(1) 70 85 ns ENABLE Enable threshold voltage, ENA 0.82 1.20 1.40 V Enable hysteresis voltage, ENA 0.03 V Falling edge deglitch, ENA(1) 2.5 µs Leakage current, ENA VI = 5.5 V 1 µA POWER GOOD Power good threshold voltage VSENSE falling 90 %Vref Power good hysteresis voltage(1) 3 %Vref Power good falling edge deglitch(1) 35 µs Output saturation voltage, PWRGD I(sink) = 2.5 mA 0.18 0.3 V Leakage current, PWRGD VI = 5.5 V 1 µA CURRENT LIMIT C t li it t i i t VI = 4.5 V Output shorted(1) 9 1 A Current limit trip point VI = 6 V Output shorted(1) 10 12 A Current limit leading edge blanking time 100 ns Current limit total response time 200 ns THERMAL SHUTDOWN Thermal shutdown trip point(1) 135 150 165 °C Thermal shutdown hysteresis(1) 10 °C OUTPUT POWER MOSFETS r Power MOSFET switches VI = 6 V(4) 26 47 mΩ rDS(on) Power MOSFET switches VI = 4.5 V(4) 30 60 mΩ TRACKIN Input offset, TRACKIN VSENSE = TRACKIN = 1.25 V −1.5 1.5 mV Input voltage range, TRACKIN See Note 1 0 Vref V (1) Specified by design (2) Static resistive loads only (3) Specified by the circuit used in Figure 9 (4) Matched MOSFETs low-side rDS(on) production tested, high-side rDS(on) specified by design |
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