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TPS62400QDRCRQ1 Datasheet(PDF) 7 Page - Texas Instruments |
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TPS62400QDRCRQ1 Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 42 page  TPS62400-Q1, TPS62402-Q1, TPS62404-Q1, TPS62405-Q1 www.ti.com SLVSA67E – FEBRUARY 2010 – REVISED JUNE 2015 7.5 Electrical Characteristics VIN = 3.6 V, VOUT1 = VOUT2 = 1.8 V, EN1 = EN2 = VIN, MODE = GND, L1 = L2 = 2.2 μH, COUT1 = COUT2 = 20 μF, TJ = –40°C to 125°C, typical values are at TJ = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT VIN Input voltage range 2.5 6 V One converter, no load on the output. PFM mode enabled (MODE/DATA = GND) device not switching, 19 29 EN1 = 1 or EN2 = 1 Two converters, no load on the output. PFM mode μA enabled (MODE/DATA = GND) device not switching, 32 48 IQ Operating quiescent current EN1 = EN2 = 1 No load on the output, MODE/DATA = GND, for one 23 converter, VOUTx = 1.575 V (1) No load on the output, MODE/DATA = VIN, for one 3.6 mA converter, VOUTx = 1.575 V (1) EN1, EN2 = GND, VIN = 3.6 V (2) 1.2 3 ISD Shutdown current μA EN1, EN2 = GND, VIN ramped from 0 V to 3.6 V (3) 0.1 1 Falling 1.5 2.35 VUVLO Undervoltage lockout threshold V Rising 2.4 ENABLE EN1, EN2 VIH High-level input voltage range, EN1, EN2 1.2 VIN V VIL Low-level input voltage range, EN1, EN2 0 0.4 V IIN Input bias current, EN1, EN2 EN1, EN2 = GND or VIN 0.05 1 μA DEF_1 INPUT VDEF_1H DEF_1 high-level digital input voltage range 0.9 VIN V TPS62402-Q1, TPS62404-Q1, TPS62405-Q1 only VDEF_1L DEF_1 low-level digital input voltage range 0 0.4 V IIN Input bias current DEF_1 DEF_1 = GND or VIN 0.01 1 μA MODE/DATA VIH High-level input voltage range, MODE/DATA 1.2 VIN V VIL Low-level input voltage range, MODE/DATA 0 0.4 V IIN Input bias current, MODE/DATA MODE/DATA = GND or VIN 0.01 1 μA VOH Acknowledge output voltage high Open drain, through external pullup resistor VIN V VOL Acknowledge output voltage low Open drain, sink current 500 μA 0 0.4 V POWER SWITCH P-channel MOSFET on-resistance, converter rDS(on) VIN = VGS = 3.6 V 280 620 m Ω 1,2 ILK_PMOS P-channel leakage current VDS = 6 V 1 μA N-channel MOSFET on-resistance converter rDS(on) VIN = VGS = 3.6 V 200 450 m Ω 1,2 Includes N-channel leakage current, ILK_SW1/SW2 Leakage current into SW1 or SW2 pin 6 7.5 μA VIN = open, VSW = 6 V, EN = GND (4) VOUT1 0.68 0.8 0.92 Forward current limit ILIMF 2.5 V ≤ VIN ≤ 6 V A PMOS and NMOS VOUT2 0.85 1 1.15 TSD Thermal shutdown Increasing junction temperature 150 ºC Thermal shutdown hysteresis Decreasing junction temperature 20 ºC OUTPUT Adjustable output 1 or output 2 voltage VOUTx 0.6 VIN V range Vref Reference voltage 600 mV (1) Device is switching with no load on the output, L1 = L2 = 3.3 μH, value includes losses of the coil. (2) These values are valid after enabling the device one time (EN1 or EN2 = high) and maintaining supply voltage VIN. (3) These values are valid when the device is disabled (EN1 and EN2 low) and supply voltage VIN is powered up. The values remain valid until enabling the device the first time (EN1 or EN2 = high). After the first enable, Note 3 becomes valid. (4) An internal resistor of 1 M Ω connects pins SW1 and SW2 to GND. Copyright © 2010–2015, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: TPS62400-Q1 TPS62402-Q1 TPS62404-Q1 TPS62405-Q1 |
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