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TPS62660 Datasheet(PDF) 5 Page - Texas Instruments |
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TPS62660 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 27 page 5 TPS62660, TPS62665 www.ti.com SLVS871D – FEBRUARY 2010 – REVISED JUNE 2016 Product Folder Links: TPS62660 TPS62665 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Electrical Characteristics (continued) Minimum and maximum values are at VI = 2.3 V to 5.5 V, VO = 1.8 V, EN = 1.8 V, AUTO mode and TA = –40°C to 85°C; circuit in the Parameter Measurement Information (unless otherwise noted). Typical values are at VI = 3.6 V, VO = 1.8 V, EN = 1.8 V, AUTO mode and TA = 25°C (unless otherwise noted). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT rDS(on) N-channel MOSFET ON- resistance TPS6266x VI = V(GS) = 3.6 V, PWM mode 140 m Ω VI = V(GS) = 2.5 V, PWM mode 200 Ilkg N-channel leakage current, NMOS V(DS) = 5.5 V, –40°C ≤ TJ ≤ 85°C 2 μA rDIS Discharge resistor for power-down sequence TPS62665 15 50 Ω P-MOS current limit 2.3 V ≤ VI ≤ 4.8 V, open loop 1400 1500 1750 mA Input current limit under short-circuit conditions VO shorted to ground 19 mA Thermal shutdown 140 °C Thermal shutdown hysteresis 10 °C OSCILLATOR fSW Oscillator frequency TPS6266x IO = 0 mA, PWM mode 5.4 6 6.6 MHz OUTPUT V(OUT) Regulated DC output voltage TPS6266x 2.3 V ≤ VI ≤ 2.7 V, 0 mA ≤ IO ≤ 600 mA 2.7 V ≤ VI ≤ 3 V, 0 mA ≤ IO ≤ 800 mA 3 V ≤ VI ≤ 4.8 V, 0 mA ≤ IO ≤ 1000 mA PFM/PWM operation 0.98 × VNOM VNOM 1.03 × VNOM V 3 V ≤ VI ≤ 5.5 V, 0 mA ≤ IO ≤ 1000 mA PFM/PWM operation 0.98 × VNOM VNOM 1.04 × VNOM 2.3 V ≤ VI ≤ 2.7 V, 0 mA ≤ IO ≤ 600 mA 2.7 V ≤ VI ≤ 3 V, 0 mA ≤ IO ≤ 800 mA 3 V ≤ VI ≤ 5.5 V, 0 mA ≤ IO ≤ 1000 mA PWM operation 0.98 × VNOM VNOM 1.02 × VNOM Line regulation VI = VO + 0.5 V (min 2.3 V) to 5.5 V, IO = 200 mA 0.13 %/V Load regulation VI = 3.6 V, IO = 0 mA to 1000 mA –0.00025 %/mA Feedback input resistance 480 k Ω ΔVO Power-save mode ripple voltage TPS62660 IO = 1 mA 20 mVPP TPS62661 IO = 1 mA L = 1 μH (muRata LQM2MPN1R0NG0) CO = 10 μF, 4 V 0402 (muRata GRM155R60G106M) 9 TPS62665 IO = 1 mA 24 Start-up time TPS62660 IO = 0 mA, time from active EN to VO 120 μs TPS62661 RL = 2 Ω, time from active EN to VO 55 (1) Maximum power dissipation is a function of TJ(max), RθJA, and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = [TJ(max)-TA] / RθJA. (2) This thermal data is measured with high-K board (4-layer board according to JESD51-7 JEDEC standard). 6.6 Dissipation Ratings (1) PACKAGE RθJA (2) RθJB (2) POWER RATING TA ≤ 25°C DERATING FACTOR ABOVE TA = 25°C YFF-6 125°C/W 53°C/W 800 mW 8 mW/°C 6.7 Typical Characteristics Table 1. Table of Graphs FIGURE η Efficiency vs load current Figure 1, Figure 2, Figure 3, Figure 4 vs input voltage Figure 5 Peak-to-peak output ripple current vs load current Figure 6, Figure 7 |
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Similar Description - TPS62660_16 |
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